Residual stress near by the interface of thin CVD diamond film and silicon substrate

Shoji Kamiya, Masaki Sato, Masumi Saka, Hiroyuki Abé

Research output: Contribution to conferencePaperpeer-review

Abstract

The state of residual stress is investigated for the case of diamond films prepared by microwave plasma chemical vapor deposition. Huge compressive residual stress is found to concentrate in the very thin region just nearby the interface. In addition, the substrate surface is also found to be in compression prior to being covered with the continuous film. The discussion here is focused on the factors, i.e., crystal orientation of the substrate and CH4 content in the source gas mixture, which may influence the residual stress distribution. As a result, the state of residual stress in the growing surface side of the films changes with these factors, but the nature of compressive residual stress concentration on the interface side remains almost the same. This fact implies that the compressive stress on the interface is expected to be fundamentally related to the nucleation process of diamond on the substrate surface.

Original languageEnglish
Pages2/-
Publication statusPublished - 1999 Dec 1
EventInterPACK '99: Pacific RIM/ASME International Intersociety Electronics Photonic Packaging Conference 'Advances in Electronic Packaging 1999' - Maui, HI, USA
Duration: 1999 Jun 131999 Jun 19

Other

OtherInterPACK '99: Pacific RIM/ASME International Intersociety Electronics Photonic Packaging Conference 'Advances in Electronic Packaging 1999'
CityMaui, HI, USA
Period99/6/1399/6/19

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering

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