Residual Stress Measurement in Silicon Substrates after Thermal Oxidation

Hideo Miura, Hiroyuki Ohta, Hiroshi Sakata, Noriaki Okamoto

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The residual stress in silicon substrates after thermal oxidation was discussed experimentally. Microscopic Raman spectroscopy was used for the stress measurement. It was confirmed that the peak position of the Raman spectra shifted linearly with existing stress. The Ar+laser beam of 1 μm diameter was radiated into the silicon substrate and the back scattered light was detected by a photon multiplier. It was found that tensile stress occurred near the silicon surface after the plain oxidation. The stress increased with lowering oxidation temperature and thickening oxide film. However, complicated stress change occurred in the silicon substrate after the local thermal oxidation. The stress change was explained considering the curvature change of the Si/SiO2 interface during the local thermal oxidation.

Original languageEnglish
Pages (from-to)902-908
Number of pages7
JournalTransactions of the Japan Society of Mechanical Engineers Series A
Issue number550
Publication statusPublished - 1992
Externally publishedYes


  • Experimental Stress Analysis
  • Nondestructive Inspection
  • Residual Stress
  • Silicon
  • Thermal Oxidation

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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