Residual stress in silicon substrate with shallow trenches on surface after local thermal oxidation

Hideo Miura, Naoto Saito, Hiroyuki Ohta, Noriaki Okamoto

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Residual stress was investigated experimentally and analytically in silicon substrates after local thermal oxidation. Shallow trenches about 0.3 μm deep were formed before 1 000°C oxidation. Residual stress in the substrate after oxidation was measured using microscopic Raman spectroscopy. Tensile stress of about 50 MPa initially occurred at the substrate surface. However, the residual stress decreased to zero as the thermal oxide film thickness increased, and then compressive stress increased. The stress development process was analyzed using the finite-element method, and the results showed that three processes were mainly involved: oxidation-induced stress at the curved surface, deflection of the nitride film, which was used as an oxidation protection mask, and constraint of volume expansion of the newly oxidized film. The predicted and measured results were in good agreement for stress changes caused by increasing oxide film thickness.

Original languageEnglish
Pages (from-to)258-264
Number of pages7
JournalJSME International Journal, Series A: Mechanics and Material Engineering
Issue number2
Publication statusPublished - 1995
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)


Dive into the research topics of 'Residual stress in silicon substrate with shallow trenches on surface after local thermal oxidation'. Together they form a unique fingerprint.

Cite this