Research on solvent composition for different surface morphology on C face during 4H-SiC solution growth

Shi Yu Xiao, Natsumi Hara, Shunta Harada, Kenta Murayama, Kenta Aoyagi, Takenobu Sakai, Toru Ujihara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Surface morphology of the SiC crystal grown on the C face of the 4H-SiC seed crystal by TSSG method using pure Si, Si-1at%Ti-C, Si-5at%Ti-C and Si-20at%Ti-C solvents was investigated. The surface morphology of the crystal grown from pure Si solvent was smooth. By the addition of Ti to the solvent, the surface morphology became rougher. The RMS value is not proportional to the concentration of Ti. The formation of macrosteps with several micrometers was observed when the addition of Ti increased to 5at% indicating the possibility of the threading screw dislocation conversion on the C face of the 4H-SiC crystal.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2014
EditorsDidier Chaussende, Gabriel Ferro
PublisherTrans Tech Publications Ltd
Pages39-42
Number of pages4
ISBN (Print)9783038354789
DOIs
Publication statusPublished - 2015
Externally publishedYes
EventEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
Duration: 2014 Sep 212014 Sep 25

Publication series

NameMaterials Science Forum
Volume821-823
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

OtherEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
CountryFrance
CityGrenoble
Period14/9/2114/9/25

Keywords

  • 4H-SiC
  • Si-Ti-C
  • Solution growth
  • Surface morphology

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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