Requirements for junction technology from device design

M. Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Requirements for the shallow junction technology in the sub-50 nm regime have been discussed. It was shown that suppression of transient enhanced diffusion (TED), dopant loss and dopant deactivation are key to achieving ultra shallow junctions with junction depth of less than 20 nm. To meet such requirements, new methods of atomic layer doping (ALD) and SiGe elevated source/drain for the formation of the ultra shallow junction have been proposed. In this paper, we focus the discussion on source/drain engineering to form an ultra shallow junction for sub-50 nm MOSFETs.

Original languageEnglish
Title of host publicationExtended Abstracts of the 1st International Workshop on Junction Technology, IWJT 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-6
Number of pages6
ISBN (Electronic)4891140089, 9784891140083
DOIs
Publication statusPublished - 2000 Jan 1
Event1st International Workshop on Junction Technology, IWJT 2000 - Chiba, Japan
Duration: 2000 Dec 6 → …

Publication series

NameExtended Abstracts of the 1st International Workshop on Junction Technology, IWJT 2000

Other

Other1st International Workshop on Junction Technology, IWJT 2000
CountryJapan
CityChiba
Period00/12/6 → …

ASJC Scopus subject areas

  • Engineering(all)

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