Reproducible trajectory on subnanosecond spin-torque magnetization switching under a zero-bias field for MgO-based ferromagnetic tunnel junctions

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Abstract

One of the features of spin-transfer torque (STT)-based magnetic random access memories (spin-RAMs) is a fast write cycle; however, switching properties in the subnanosecond regime for MgO-based magnetic tunnel junctions (MTJs) are still unclear. In this work, we demonstrated subnanosecond magnetization switching by STT for MgO-based MTJs. We also discuss the thermal effect on subnanosecond STT switching, as well as the subnanosecond pulse width that is dependent on the remarkable plateau that switching probability has under a zero-bias field.

Original languageEnglish
Article number142502
JournalApplied Physics Letters
Volume96
Issue number14
DOIs
Publication statusPublished - 2010 Apr 27

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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