TY - GEN
T1 - Replacing the PECVD-SiO2 in the through-silicon via of high-density 3D LSIs with highly scalable low cost organic liner
T2 - 64th Electronic Components and Technology Conference, ECTC 2014
AU - Mariappan, Murugesan
AU - Fukushima, Takafumi
AU - Beatrix, Jichel
AU - Hashimoto, Hiroyuki
AU - Sato, Yutaka
AU - Lee, Kangwook
AU - Tanaka, Tetsu
AU - Koyanagi, Mitsumasa
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/9/11
Y1 - 2014/9/11
N2 - A novel approach to suppress the conventional Cu-TSV induced thermo-mechanical stress in 3D-LSI chip is proposed, fabricated and tested. In this approach, a thermal-chemical-vapor-deposition grown organic poly-imide based polymer is conformally deposited along the side wall of the TSV. As-grown polymer was tested for its physical properties and mechanical properties, and was also evaluated for their role in minimizing the thermo-mechanical stress in vicinal and via-space Si. It was found that replacing the conventional SiO2 dielectric liner (sandwiched between the via-metal and Si) with organic polymer greatly helps in suppressing the thermo-mechanical stress, and thus the keep-out zone.
AB - A novel approach to suppress the conventional Cu-TSV induced thermo-mechanical stress in 3D-LSI chip is proposed, fabricated and tested. In this approach, a thermal-chemical-vapor-deposition grown organic poly-imide based polymer is conformally deposited along the side wall of the TSV. As-grown polymer was tested for its physical properties and mechanical properties, and was also evaluated for their role in minimizing the thermo-mechanical stress in vicinal and via-space Si. It was found that replacing the conventional SiO2 dielectric liner (sandwiched between the via-metal and Si) with organic polymer greatly helps in suppressing the thermo-mechanical stress, and thus the keep-out zone.
UR - http://www.scopus.com/inward/record.url?scp=84907905045&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84907905045&partnerID=8YFLogxK
U2 - 10.1109/ECTC.2014.6897353
DO - 10.1109/ECTC.2014.6897353
M3 - Conference contribution
AN - SCOPUS:84907905045
T3 - Proceedings - Electronic Components and Technology Conference
SP - 636
EP - 640
BT - Proceedings - Electronic Components and Technology Conference
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 27 May 2014 through 30 May 2014
ER -