Replacing the PECVD-SiO2 in the through-silicon via of high-density 3D LSIs with highly scalable low cost organic liner: Merits and demerits

Murugesan Mariappan, Takafumi Fukushima, Jichel Beatrix, Hiroyuki Hashimoto, Yutaka Sato, Kangwook Lee, Tetsu Tanaka, Mitsumasa Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

A novel approach to suppress the conventional Cu-TSV induced thermo-mechanical stress in 3D-LSI chip is proposed, fabricated and tested. In this approach, a thermal-chemical-vapor-deposition grown organic poly-imide based polymer is conformally deposited along the side wall of the TSV. As-grown polymer was tested for its physical properties and mechanical properties, and was also evaluated for their role in minimizing the thermo-mechanical stress in vicinal and via-space Si. It was found that replacing the conventional SiO2 dielectric liner (sandwiched between the via-metal and Si) with organic polymer greatly helps in suppressing the thermo-mechanical stress, and thus the keep-out zone.

Original languageEnglish
Title of host publicationProceedings - Electronic Components and Technology Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages636-640
Number of pages5
ISBN (Electronic)9781479924073
DOIs
Publication statusPublished - 2014 Sep 11
Event64th Electronic Components and Technology Conference, ECTC 2014 - Orlando, United States
Duration: 2014 May 272014 May 30

Publication series

NameProceedings - Electronic Components and Technology Conference
ISSN (Print)0569-5503

Other

Other64th Electronic Components and Technology Conference, ECTC 2014
CountryUnited States
CityOrlando
Period14/5/2714/5/30

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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