Replacing the PECVD-SiO2 in the through-silicon via of high-density 3D LSIs with highly scalable low cost organic liner: Merits and demerits

Murugesan Mariappan; Takafumi Fukushima; Jichel Beatrix; Hiroyuki Hashimoto; Yutaka Sato; Kangwook Lee; Tetsu Tanaka; Mitsumasa Koyanagi

doi:10.1109/ECTC.2014.6897353

Replacing the PECVD-SiO₂ in the through-silicon via of high-density 3D LSIs with highly scalable low cost organic liner: Merits and demerits

Murugesan Mariappan, Takafumi Fukushima, Jichel Beatrix, Hiroyuki Hashimoto, Yutaka Sato, Kangwook Lee, Tetsu Tanaka, Mitsumasa Koyanagi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

A novel approach to suppress the conventional Cu-TSV induced thermo-mechanical stress in 3D-LSI chip is proposed, fabricated and tested. In this approach, a thermal-chemical-vapor-deposition grown organic poly-imide based polymer is conformally deposited along the side wall of the TSV. As-grown polymer was tested for its physical properties and mechanical properties, and was also evaluated for their role in minimizing the thermo-mechanical stress in vicinal and via-space Si. It was found that replacing the conventional SiO₂ dielectric liner (sandwiched between the via-metal and Si) with organic polymer greatly helps in suppressing the thermo-mechanical stress, and thus the keep-out zone.

Original language	English
Title of host publication	Proceedings - Electronic Components and Technology Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	636-640
Number of pages	5
ISBN (Electronic)	9781479924073
DOIs	https://doi.org/10.1109/ECTC.2014.6897353
Publication status	Published - 2014 Sep 11
Event	64th Electronic Components and Technology Conference, ECTC 2014 - Orlando, United States Duration: 2014 May 27 → 2014 May 30

Publication series

Name	Proceedings - Electronic Components and Technology Conference
ISSN (Print)	0569-5503

Other

Other	64th Electronic Components and Technology Conference, ECTC 2014
Country/Territory	United States
City	Orlando
Period	14/5/27 → 14/5/30

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ECTC.2014.6897353

Cite this

Mariappan, M., Fukushima, T., Beatrix, J., Hashimoto, H., Sato, Y., Lee, K., Tanaka, T., & Koyanagi, M. (2014). Replacing the PECVD-SiO₂ in the through-silicon via of high-density 3D LSIs with highly scalable low cost organic liner: Merits and demerits. In Proceedings - Electronic Components and Technology Conference (pp. 636-640). [6897353] (Proceedings - Electronic Components and Technology Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC.2014.6897353

Replacing the PECVD-SiO₂ in the through-silicon via of high-density 3D LSIs with highly scalable low cost organic liner : Merits and demerits. / Mariappan, Murugesan; Fukushima, Takafumi; Beatrix, Jichel et al.

Proceedings - Electronic Components and Technology Conference. Institute of Electrical and Electronics Engineers Inc., 2014. p. 636-640 6897353 (Proceedings - Electronic Components and Technology Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mariappan, M, Fukushima, T, Beatrix, J, Hashimoto, H, Sato, Y, Lee, K, Tanaka, T & Koyanagi, M 2014, Replacing the PECVD-SiO₂ in the through-silicon via of high-density 3D LSIs with highly scalable low cost organic liner: Merits and demerits. in Proceedings - Electronic Components and Technology Conference., 6897353, Proceedings - Electronic Components and Technology Conference, Institute of Electrical and Electronics Engineers Inc., pp. 636-640, 64th Electronic Components and Technology Conference, ECTC 2014, Orlando, United States, 14/5/27. https://doi.org/10.1109/ECTC.2014.6897353

Mariappan M, Fukushima T, Beatrix J, Hashimoto H, Sato Y, Lee K et al. Replacing the PECVD-SiO₂ in the through-silicon via of high-density 3D LSIs with highly scalable low cost organic liner: Merits and demerits. In Proceedings - Electronic Components and Technology Conference. Institute of Electrical and Electronics Engineers Inc. 2014. p. 636-640. 6897353. (Proceedings - Electronic Components and Technology Conference). doi: 10.1109/ECTC.2014.6897353

Mariappan, Murugesan ; Fukushima, Takafumi ; Beatrix, Jichel et al. / Replacing the PECVD-SiO₂ in the through-silicon via of high-density 3D LSIs with highly scalable low cost organic liner : Merits and demerits. Proceedings - Electronic Components and Technology Conference. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 636-640 (Proceedings - Electronic Components and Technology Conference).

@inproceedings{0d5a0bb0a3d24a14a7e34b3f655ad3f9,

title = "Replacing the PECVD-SiO2 in the through-silicon via of high-density 3D LSIs with highly scalable low cost organic liner: Merits and demerits",

abstract = "A novel approach to suppress the conventional Cu-TSV induced thermo-mechanical stress in 3D-LSI chip is proposed, fabricated and tested. In this approach, a thermal-chemical-vapor-deposition grown organic poly-imide based polymer is conformally deposited along the side wall of the TSV. As-grown polymer was tested for its physical properties and mechanical properties, and was also evaluated for their role in minimizing the thermo-mechanical stress in vicinal and via-space Si. It was found that replacing the conventional SiO2 dielectric liner (sandwiched between the via-metal and Si) with organic polymer greatly helps in suppressing the thermo-mechanical stress, and thus the keep-out zone.",

author = "Murugesan Mariappan and Takafumi Fukushima and Jichel Beatrix and Hiroyuki Hashimoto and Yutaka Sato and Kangwook Lee and Tetsu Tanaka and Mitsumasa Koyanagi",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 64th Electronic Components and Technology Conference, ECTC 2014 ; Conference date: 27-05-2014 Through 30-05-2014",

year = "2014",

month = sep,

day = "11",

doi = "10.1109/ECTC.2014.6897353",

language = "English",

series = "Proceedings - Electronic Components and Technology Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "636--640",

booktitle = "Proceedings - Electronic Components and Technology Conference",

}

TY - GEN

T1 - Replacing the PECVD-SiO2 in the through-silicon via of high-density 3D LSIs with highly scalable low cost organic liner

T2 - 64th Electronic Components and Technology Conference, ECTC 2014

AU - Mariappan, Murugesan

AU - Fukushima, Takafumi

AU - Beatrix, Jichel

AU - Hashimoto, Hiroyuki

AU - Sato, Yutaka

AU - Lee, Kangwook

AU - Tanaka, Tetsu

AU - Koyanagi, Mitsumasa

PY - 2014/9/11

Y1 - 2014/9/11

N2 - A novel approach to suppress the conventional Cu-TSV induced thermo-mechanical stress in 3D-LSI chip is proposed, fabricated and tested. In this approach, a thermal-chemical-vapor-deposition grown organic poly-imide based polymer is conformally deposited along the side wall of the TSV. As-grown polymer was tested for its physical properties and mechanical properties, and was also evaluated for their role in minimizing the thermo-mechanical stress in vicinal and via-space Si. It was found that replacing the conventional SiO2 dielectric liner (sandwiched between the via-metal and Si) with organic polymer greatly helps in suppressing the thermo-mechanical stress, and thus the keep-out zone.

AB - A novel approach to suppress the conventional Cu-TSV induced thermo-mechanical stress in 3D-LSI chip is proposed, fabricated and tested. In this approach, a thermal-chemical-vapor-deposition grown organic poly-imide based polymer is conformally deposited along the side wall of the TSV. As-grown polymer was tested for its physical properties and mechanical properties, and was also evaluated for their role in minimizing the thermo-mechanical stress in vicinal and via-space Si. It was found that replacing the conventional SiO2 dielectric liner (sandwiched between the via-metal and Si) with organic polymer greatly helps in suppressing the thermo-mechanical stress, and thus the keep-out zone.

UR - http://www.scopus.com/inward/record.url?scp=84907905045&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907905045&partnerID=8YFLogxK

U2 - 10.1109/ECTC.2014.6897353

DO - 10.1109/ECTC.2014.6897353

M3 - Conference contribution

AN - SCOPUS:84907905045

T3 - Proceedings - Electronic Components and Technology Conference

SP - 636

EP - 640

BT - Proceedings - Electronic Components and Technology Conference

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 27 May 2014 through 30 May 2014

ER -