Remarkable Suppression of Local Stress in 3D IC by Manganese Nitride-Based Filler with Large Negative CTE

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

A local bending stress is induced by coefficient of thermal expansion (CTE) mismatch between underfill material and metal microbumps in three-dimensional IC (3D IC). A high concentration of filler in underfill is effective to suppress the local bending stress. However, it is difficult to apply high concentration of filler due to fine pitch microbumps. On the other hand, manganese nitride-based compound has large negative CTE compared with conventional negative-CTE materials. In this study, we have investigated the effect of manganese nitride-based filler on local bending stress induced by CTE mismatch between underfill and metal microbumps in 3D IC. We observed that manganese nitride-based filler can decrease CTE of underfill compared with conventional silica-based filler. This result indicated that manganese nitride-based filler can reduce keep-out-zone (KOZ) in 3D IC by local bending stress suppression.

Original languageEnglish
Title of host publicationProceedings - IEEE 67th Electronic Components and Technology Conference, ECTC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1523-1528
Number of pages6
ISBN (Electronic)9781509043323
DOIs
Publication statusPublished - 2017 Aug 1
Event67th IEEE Electronic Components and Technology Conference, ECTC 2017 - Lake Buena Vista, United States
Duration: 2017 May 302017 Jun 2

Publication series

NameProceedings - Electronic Components and Technology Conference
ISSN (Print)0569-5503

Other

Other67th IEEE Electronic Components and Technology Conference, ECTC 2017
CountryUnited States
CityLake Buena Vista
Period17/5/3017/6/2

Keywords

  • 3D IC
  • Microbump
  • Negative CTE
  • Underfill

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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