Reliability of wire-bonding and solder joint for high temperature operation of power semiconductor device

Y. Yamada, Y. Takaku, Y. Yagi, I. Nakagawa, T. Atsumi, M. Shirai, Ikuo Ohnuma, K. Ishida

Research output: Contribution to journalArticle

80 Citations (Scopus)

Abstract

Thick Al wires bonded on chips of power semiconductor devices were examined for thermal cycle tests, then the bonded joints were cut using microtome method, after that those were observed by scanning electron microscope and analyzed by electron back scattered diffraction. Some cracks were observed between Al wires and the chips, unexpectedly the crack lengths were almost constant for -40/150 °C, -40/200 °C and -40/250 °C tests. It is considered that re-crystallization has been progressed during the high temperature side of the thermal cycle tests. Furthermore, joint samples were prepared using high temperature solders such as Zn-Al and Bi with CuAlMn, Direct Bonded Copper insulated substrates and Mo heatsinks. The fabricated samples were evaluated by scanning acoustic microscope before and after thermal cycle tests. Consequently, almost neither serious damages nor delaminations were observed for -40/200 °C and -40/250 °C tests.

Original languageEnglish
Pages (from-to)2147-2151
Number of pages5
JournalMicroelectronics Reliability
Volume47
Issue number12
DOIs
Publication statusPublished - 2007 Dec 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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  • Cite this

    Yamada, Y., Takaku, Y., Yagi, Y., Nakagawa, I., Atsumi, T., Shirai, M., Ohnuma, I., & Ishida, K. (2007). Reliability of wire-bonding and solder joint for high temperature operation of power semiconductor device. Microelectronics Reliability, 47(12), 2147-2151. https://doi.org/10.1016/j.microrel.2007.07.102