Reliability of silicon nitride gate dielectrics grown at 400 °C formed by microwave-excited high-density plasma

Ichiro Ohshima; Weitao Cheng; Yasuhiro Ono; Masaaki Higuchi; Masaki Hirayama; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1016/S0169-4332(03)00423-9

Reliability of silicon nitride gate dielectrics grown at 400 °C formed by microwave-excited high-density plasma

Ichiro Ohshima, Weitao Cheng, Yasuhiro Ono, Masaaki Higuchi, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Silicon nitride gate dielectric metal-nitride-semiconductor (MNS) having a Si ₃ N ₄ film grown at 400 °C by microwave-excited high-density plasma has been developed. We demonstrated the electric characteristics of the MNS capacitors with the Si ₃ N ₄ film grown by microwave-excited high-density plasma using krypton (Kr) gas. The MNS capacitors have larger TDDB lifetime and have lower leakage current capability compared with the MOS capacitors. The TDDB lifetime of the Kr/NH ₃ Si ₃ N ₄ is three times larger than that of the Ar/NH ₃ Si ₃ N ₄ . Furthermore the TDDB characteristics of Si ₃ N ₄ on (1 1 0)Si are same as those of Si ₃ N ₄ on (1 0 0)Si.

Original language	English
Pages (from-to)	246-251
Number of pages	6
Journal	Applied Surface Science
Volume	216
Issue number	1-4 SPEC.
DOIs	https://doi.org/10.1016/S0169-4332(03)00423-9
Publication status	Published - 2003 Jun 30

Keywords

Insulator
Krypton
MNS
Plasma nitridation
Reliability
Si N
Si surface orientation

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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Reliability of silicon nitride gate dielectrics grown at 400 °C formed by microwave-excited high-density plasma. / Ohshima, Ichiro; Cheng, Weitao; Ono, Yasuhiro; Higuchi, Masaaki; Hirayama, Masaki; Teramoto, Akinobu; Sugawa, Shigetoshi; Ohmi, Tadahiro.

In: Applied Surface Science, Vol. 216, No. 1-4 SPEC., 30.06.2003, p. 246-251.

Research output: Contribution to journal › Article › peer-review

@article{b4bb8d6bc1254448942e36381df26974,

title = "Reliability of silicon nitride gate dielectrics grown at 400 °C formed by microwave-excited high-density plasma",

abstract = " Silicon nitride gate dielectric metal-nitride-semiconductor (MNS) having a Si 3 N 4 film grown at 400 °C by microwave-excited high-density plasma has been developed. We demonstrated the electric characteristics of the MNS capacitors with the Si 3 N 4 film grown by microwave-excited high-density plasma using krypton (Kr) gas. The MNS capacitors have larger TDDB lifetime and have lower leakage current capability compared with the MOS capacitors. The TDDB lifetime of the Kr/NH 3 Si 3 N 4 is three times larger than that of the Ar/NH 3 Si 3 N 4 . Furthermore the TDDB characteristics of Si 3 N 4 on (1 1 0)Si are same as those of Si 3 N 4 on (1 0 0)Si.",

keywords = "Insulator, Krypton, MNS, Plasma nitridation, Reliability, Si N, Si surface orientation",

author = "Ichiro Ohshima and Weitao Cheng and Yasuhiro Ono and Masaaki Higuchi and Masaki Hirayama and Akinobu Teramoto and Shigetoshi Sugawa and Tadahiro Ohmi",

year = "2003",

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doi = "10.1016/S0169-4332(03)00423-9",

language = "English",

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pages = "246--251",

journal = "Applied Surface Science",

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T1 - Reliability of silicon nitride gate dielectrics grown at 400 °C formed by microwave-excited high-density plasma

AU - Ohshima, Ichiro

AU - Cheng, Weitao

AU - Ono, Yasuhiro

AU - Higuchi, Masaaki

AU - Hirayama, Masaki

AU - Teramoto, Akinobu

AU - Sugawa, Shigetoshi

AU - Ohmi, Tadahiro

PY - 2003/6/30

Y1 - 2003/6/30

N2 - Silicon nitride gate dielectric metal-nitride-semiconductor (MNS) having a Si 3 N 4 film grown at 400 °C by microwave-excited high-density plasma has been developed. We demonstrated the electric characteristics of the MNS capacitors with the Si 3 N 4 film grown by microwave-excited high-density plasma using krypton (Kr) gas. The MNS capacitors have larger TDDB lifetime and have lower leakage current capability compared with the MOS capacitors. The TDDB lifetime of the Kr/NH 3 Si 3 N 4 is three times larger than that of the Ar/NH 3 Si 3 N 4 . Furthermore the TDDB characteristics of Si 3 N 4 on (1 1 0)Si are same as those of Si 3 N 4 on (1 0 0)Si.

AB - Silicon nitride gate dielectric metal-nitride-semiconductor (MNS) having a Si 3 N 4 film grown at 400 °C by microwave-excited high-density plasma has been developed. We demonstrated the electric characteristics of the MNS capacitors with the Si 3 N 4 film grown by microwave-excited high-density plasma using krypton (Kr) gas. The MNS capacitors have larger TDDB lifetime and have lower leakage current capability compared with the MOS capacitors. The TDDB lifetime of the Kr/NH 3 Si 3 N 4 is three times larger than that of the Ar/NH 3 Si 3 N 4 . Furthermore the TDDB characteristics of Si 3 N 4 on (1 1 0)Si are same as those of Si 3 N 4 on (1 0 0)Si.

KW - Insulator

KW - Krypton

KW - MNS

KW - Plasma nitridation

KW - Reliability

KW - Si N

KW - Si surface orientation

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JO - Applied Surface Science

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ER -

Reliability of silicon nitride gate dielectrics grown at 400 °C formed by microwave-excited high-density plasma

Abstract

Keywords

ASJC Scopus subject areas

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