Reliability of silicon nitride gate dielectrics grown at 400 °C formed by microwave-excited high-density plasma

Ichiro Ohshima, Weitao Cheng, Yasuhiro Ono, Masaaki Higuchi, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Silicon nitride gate dielectric metal-nitride-semiconductor (MNS) having a Si 3 N 4 film grown at 400 °C by microwave-excited high-density plasma has been developed. We demonstrated the electric characteristics of the MNS capacitors with the Si 3 N 4 film grown by microwave-excited high-density plasma using krypton (Kr) gas. The MNS capacitors have larger TDDB lifetime and have lower leakage current capability compared with the MOS capacitors. The TDDB lifetime of the Kr/NH 3 Si 3 N 4 is three times larger than that of the Ar/NH 3 Si 3 N 4 . Furthermore the TDDB characteristics of Si 3 N 4 on (1 1 0)Si are same as those of Si 3 N 4 on (1 0 0)Si.

Original languageEnglish
Pages (from-to)246-251
Number of pages6
JournalApplied Surface Science
Volume216
Issue number1-4 SPEC.
DOIs
Publication statusPublished - 2003 Jun 30

Keywords

  • Insulator
  • Krypton
  • MNS
  • Plasma nitridation
  • Reliability
  • Si N
  • Si surface orientation

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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