Abstract
Silicon nitride gate dielectric metal-nitride-semiconductor (MNS) having a Si 3 N 4 film grown at 400 °C by microwave-excited high-density plasma has been developed. We demonstrated the electric characteristics of the MNS capacitors with the Si 3 N 4 film grown by microwave-excited high-density plasma using krypton (Kr) gas. The MNS capacitors have larger TDDB lifetime and have lower leakage current capability compared with the MOS capacitors. The TDDB lifetime of the Kr/NH 3 Si 3 N 4 is three times larger than that of the Ar/NH 3 Si 3 N 4 . Furthermore the TDDB characteristics of Si 3 N 4 on (1 1 0)Si are same as those of Si 3 N 4 on (1 0 0)Si.
Original language | English |
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Pages (from-to) | 246-251 |
Number of pages | 6 |
Journal | Applied Surface Science |
Volume | 216 |
Issue number | 1-4 SPEC. |
DOIs | |
Publication status | Published - 2003 Jun 30 |
Keywords
- Insulator
- Krypton
- MNS
- Plasma nitridation
- Reliability
- Si N
- Si surface orientation
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films