@inproceedings{539d593caf934c618b8d11a05266d986,
title = "Reliability of MgO in magnetic tunnel junctions formed by MgO sputtering and Mg oxidation",
abstract = "The film properties and breakdown characteristics of the MgO films formed via radio frequency (RF) sputtering and Mg oxidation in the CoFeB/MgO/CoFeB structure were evaluated. The properties of the RF-MgO and Mg-oxidation films were improved by annealing. The breakdown of both films depended on the stress voltage. Uniform MgO could not be formed by oxidation alone; the required temperature to improve the breakdown characteristics of Mg-oxidation film is approximately 50°C higher than that of RF-MgO film, and the initial failure was remained after the annealing at 350° C in the Mg-oxidation film.",
keywords = "Magnesium oxide, Magnetoresistive random access memory, Mg oxidation, Reliability, Sputtering",
author = "Akinobu Teramoto and Keiichi Hashimoto and Tomoyuki Suwa and Tsuchimoto, {Jun Ichi} and Marie Hayashi and Hyeonwoo Park and Shigetoshi Sugawa",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE International Reliability Physics Symposium, IRPS 2018 ; Conference date: 11-03-2018 Through 15-03-2018",
year = "2018",
month = may,
day = "25",
doi = "10.1109/IRPS.2018.8353664",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "PGD.41--PGD.46",
booktitle = "2018 IEEE International Reliability Physics Symposium, IRPS 2018",
}