Reliability of MgO in magnetic tunnel junctions formed by MgO sputtering and Mg oxidation

Akinobu Teramoto, Keiichi Hashimoto, Tomoyuki Suwa, Jun Ichi Tsuchimoto, Marie Hayashi, Hyeonwoo Park, Shigetoshi Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The film properties and breakdown characteristics of the MgO films formed via radio frequency (RF) sputtering and Mg oxidation in the CoFeB/MgO/CoFeB structure were evaluated. The properties of the RF-MgO and Mg-oxidation films were improved by annealing. The breakdown of both films depended on the stress voltage. Uniform MgO could not be formed by oxidation alone; the required temperature to improve the breakdown characteristics of Mg-oxidation film is approximately 50°C higher than that of RF-MgO film, and the initial failure was remained after the annealing at 350° C in the Mg-oxidation film.

Original languageEnglish
Title of host publication2018 IEEE International Reliability Physics Symposium, IRPS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesPGD.41-PGD.46
ISBN (Electronic)9781538654798
DOIs
Publication statusPublished - 2018 May 25
Event2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, United States
Duration: 2018 Mar 112018 Mar 15

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2018-March
ISSN (Print)1541-7026

Other

Other2018 IEEE International Reliability Physics Symposium, IRPS 2018
Country/TerritoryUnited States
CityBurlingame
Period18/3/1118/3/15

Keywords

  • Magnesium oxide
  • Magnetoresistive random access memory
  • Mg oxidation
  • Reliability
  • Sputtering

ASJC Scopus subject areas

  • Engineering(all)

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