Reliability of Al2O3/In-Si-O-C thin-film transistor with an Al2O3 passivation layer under gate-bias stress

Kazunori Kurishima, Toshihide Nabatame, Takashi Onaya, Kazuhito Tsukagoshi, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We investigated threshold voltage shift (ΔVth ) of Al2O3 insulator/In-Si-O-C thin-film transistors (TFTs) with and without an Al2O3 passivation layer under the negative gate bias stress (NBS) and negative gate bias illumination stress (NBIS) conditions. A large A of-4.7 V was observed in TFT without an Al2O3 passivation layer (w/o) due to the three components such as hole trap (-0.9 V) at around the valence band edge, deep trap (-0.7 V), and generated hole (-3.1 V) at around fermi-level generated by absorbed O2 molecule at Al2O3 insulator/In-Si-O-C interface. The influence of absorbed O2 molecule on AKu, could be significantly suppressed up to approximately 45 % as an Al2O3 passivation layer increases from 0 to 10 nm.

Original languageEnglish
Title of host publicationECS Transactions
EditorsYue Kuo
PublisherElectrochemical Society Inc.
Pages135-145
Number of pages11
Edition11
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2018 Jan 1
Externally publishedYes
EventSymposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 2018 Sep 302018 Oct 4

Publication series

NameECS Transactions
Number11
Volume86
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on Thin Film Transistor Technologies 14, TFTT 2018 - AiMES 2018, ECS and SMEQ Joint International Meeting
CountryMexico
CityCancun
Period18/9/3018/10/4

ASJC Scopus subject areas

  • Engineering(all)

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