Reliability issues of flash memory cells

Seiichi Aritome, Riichiro Shirota, Gertjan Hemink, Tetsuo Endoh, Fujio Masuoka

Research output: Contribution to journalArticlepeer-review

164 Citations (Scopus)


The reliability issues of Flash electrically erasable programmable read-only memory (Flash EEPROM) are reviewed in this paper. The reduction of the memory cell size and improvement in the reliability have been realized by several breakthroughs in the device technology; in particular, the reliability of the ETOX and NAND structure EEPROM will be discussed in detail. Flash EEPROM is expected to be a very promising device for a large nonvolatile memory market. One of the most promising applications is the replacement of the conventional magnetic hard disk by nonvolatile memories.

Original languageEnglish
Pages (from-to)776-788
Number of pages13
JournalProceedings of the IEEE
Issue number5
Publication statusPublished - 1993 May
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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