Reliability characteristics of W-La2O3 structures compared with those of HfO2-based gate oxides

J. Molina, F. J. De La Hidalga, P. Rosales, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, we report and compare the reliability results obtained for W-La2O3 gated Metal-Oxide-Semiconductor (MOS) devices with those of HfO2-based systems reported in literature. Reliability issues like stress-induced leakage current (SILC), interface-states generation (Dit), threshold voltage shift (ΔVth) and time to breakdown (t bd) were compared and analyzed for both dielectrics in order to obtain a more specific assessment of their resistance to electrical degradation and breakdown.

Original languageEnglish
Title of host publication2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China
Duration: 2008 Dec 82008 Dec 10

Publication series

Name2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/TerritoryChina
CityHong Kong
Period08/12/808/12/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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