Relaxations of the surface photovoltage effect on the atomically controlled semiconductor surfaces studied by time-resolved photoemission spectroscopy

M. Ogawa, S. Yamamoto, K. Fujikawa, R. Hobara, R. Yukawa, Sh Yamamoto, S. Kitagawa, D. Pierucci, M. G. Silly, C. H. Lin, R. Y. Liu, H. Daimon, F. Sirotti, S. J. Tang, I. Matsuda

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15 Citations (Scopus)

Abstract

We have systematically investigated relaxation of the surface photovoltage effect on the atomically controlled In/Si(111) surfaces with distinctive surface states and different amounts of the surface band bending. The temporal variations were traced in real time by time-resolved photoemission spectroscopy using soft x-ray synchrotron radiation. The relaxation is found to be temporally limited by two steps of the carrier transfer from the bulk to the surface: the tunneling process at a delay time ≤100 ns and the thermionic process on the following time scale (≥100 ns). Crossover of the two mechanisms can be understood by breakdown of the quantum tunneling regime by the increase in width of the space-charge layer during the relaxation.

Original languageEnglish
Article number165313
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume88
Issue number16
DOIs
Publication statusPublished - 2013 Oct 21
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Ogawa, M., Yamamoto, S., Fujikawa, K., Hobara, R., Yukawa, R., Yamamoto, S., Kitagawa, S., Pierucci, D., Silly, M. G., Lin, C. H., Liu, R. Y., Daimon, H., Sirotti, F., Tang, S. J., & Matsuda, I. (2013). Relaxations of the surface photovoltage effect on the atomically controlled semiconductor surfaces studied by time-resolved photoemission spectroscopy. Physical Review B - Condensed Matter and Materials Physics, 88(16), [165313]. https://doi.org/10.1103/PhysRevB.88.165313