We studied the transport of photoinjected spins in GaAs by time-resolved photoluminescence measurements. At low temperatures, the spin polarization after drift transport of 4 μm is found to decrease as the applied electric field E increases to a few kV/cm, and it disappears when E exceeds 3 kV/cm. The origin of the field-dependent spin relaxation is discussed.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)