Relaxation enhancement of SiGe thin layers by ion implantation into Si substrates

K. Sawano, Y. Hirose, S. Koh, K. Nakagawa, T. Hattori, Y. Shiraki

    Research output: Contribution to journalConference article

    15 Citations (Scopus)

    Abstract

    Extremely thin SiGe buffer layers with almost full strain relaxation were obtained by Ar ion implantation into Si substrates before SiGe growth. The amount of strain relaxation was found to depend on ion dose and implantation energy, indicating that ion-implantation-induced defects play an important role in strain relaxation. The existence of a tensilely strained Si layer, observed by Raman spectroscopy, implies that the ion-implanted Si substrate has a compliant effect for SiGe buffer layer growth.

    Original languageEnglish
    Pages (from-to)685-688
    Number of pages4
    JournalJournal of Crystal Growth
    Volume251
    Issue number1-4
    DOIs
    Publication statusPublished - 2003 Apr 1
    EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
    Duration: 2002 Sep 152002 Sep 20

    Keywords

    • A1. Strain relaxation
    • A3. Ion implantation
    • A3. Molecular beam epitaxy
    • B2. SiGe

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Inorganic Chemistry
    • Materials Chemistry

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  • Cite this

    Sawano, K., Hirose, Y., Koh, S., Nakagawa, K., Hattori, T., & Shiraki, Y. (2003). Relaxation enhancement of SiGe thin layers by ion implantation into Si substrates. Journal of Crystal Growth, 251(1-4), 685-688. https://doi.org/10.1016/S0022-0248(02)02287-X