Relaxation enhancement of SiGe thin layers by ion implantation into Si substrates

K. Sawano, Y. Hirose, S. Koh, K. Nakagawa, T. Hattori, Y. Shiraki

    Research output: Contribution to journalConference articlepeer-review

    15 Citations (Scopus)


    Extremely thin SiGe buffer layers with almost full strain relaxation were obtained by Ar ion implantation into Si substrates before SiGe growth. The amount of strain relaxation was found to depend on ion dose and implantation energy, indicating that ion-implantation-induced defects play an important role in strain relaxation. The existence of a tensilely strained Si layer, observed by Raman spectroscopy, implies that the ion-implanted Si substrate has a compliant effect for SiGe buffer layer growth.

    Original languageEnglish
    Pages (from-to)685-688
    Number of pages4
    JournalJournal of Crystal Growth
    Issue number1-4
    Publication statusPublished - 2003 Apr
    EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
    Duration: 2002 Sep 152002 Sep 20


    • A1. Strain relaxation
    • A3. Ion implantation
    • A3. Molecular beam epitaxy
    • B2. SiGe

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Inorganic Chemistry
    • Materials Chemistry


    Dive into the research topics of 'Relaxation enhancement of SiGe thin layers by ion implantation into Si substrates'. Together they form a unique fingerprint.

    Cite this