## Abstract

The dependences of diffusion coefficient of As, D_{As}, upon total As concentration, C_{T}, and the relationships between C_{T} and resistivity ρ for several diffusion temperatures are experimentally obtained for the As diffusion into p-type Si from doped polycrystalline-Si sources in the temperature range 850-1050°C. It is found that the relationship between C_{T} and ρ is dependent upon diffusion temperature for C_{T} above 10^{20} cm^{-3}. The relationship between C_{T} and electrically active As concentration at diffusion temperature, C_{A}, i.e., C_{T}=C_{A}+(3. 2×10^{-6}/n^{3}_{i}) C^{4}_{A} can be obtained, assuming that only electrically active As is mobile and is diffused by the single-level vacancy mechanism, and using the experimental result that the dependence of D_{As}/D_{i} (D_{i} is the intrinsic diffusion coefficient of As) upon C_{T}/n_{i} (n _{i} is the intrinsic electron concentration) is not influenced by diffusion temperature. Using the above equation, it is found that the relationship between C_{A} and ρ is independent of diffusion temperature, even for C_{A} above 10^{20} cm^{-3}, and can be approximated for C_{A} above 10^{20} cm^{-3} by an empirical equation: ρ=8.7×10^{4} C^{-2/5} _{A}.

Original language | English |
---|---|

Pages (from-to) | 804-808 |

Number of pages | 5 |

Journal | Journal of Applied Physics |

Volume | 50 |

Issue number | 2 |

DOIs | |

Publication status | Published - 1979 |

## ASJC Scopus subject areas

- Physics and Astronomy(all)