Relationship between Sr2(Ta1-xNbx) 2O7 crystal phase and RF-sputtering plasma condition for metal-ferroelectric-insulator-Si structure device formation

Ichirou Takahashi, Hiroyuki Sakurai, Tatsunori Isogai, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Sr2Ta1-xNbx)2O7 (STN, x = 0.3) is suitable for use as a ferroelectric material for ferroelectric memory field-effect transistors, because it has a low dielectric constant. However, the fabrication of STN on an amorphous insulator, such as SiO 2, is difficult. In particular, in the case of STN, because its crystallization annealing temperature is 950 °C, the metal element of STN and Si react mutually during crystallization annealing. As a result, perovskite STN cannot be fabricated. We have clarified the relationship between a ferroelectric crystal phase on amorphous SiO2 and an rf-sputtering plasma condition. On the basis of the results obtained, STN film formation technologies on SiO2, which can be applied to metal-ferroelectric- insulator-Si field-effect transistor-type ferroelectric random access memories, have been developed by controlling the properties of rf-sputtering plasma and the application of microwave-excited plasma.

Original languageEnglish
Pages (from-to)3207-3212
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 B
DOIs
Publication statusPublished - 2006 Apr 25

Keywords

  • Ferroelectric crystallization on amorphous insulator
  • High crystallization annealing temperature
  • MFIS-FET
  • Microwave-excited plasma
  • Rf-sputtering plasma
  • Sr(TaNb)O (STN)

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Relationship between Sr<sub>2</sub>(Ta<sub>1-x</sub>Nb<sub>x</sub>) <sub>2</sub>O<sub>7</sub> crystal phase and RF-sputtering plasma condition for metal-ferroelectric-insulator-Si structure device formation'. Together they form a unique fingerprint.

  • Cite this