Relationship between passivation properties and band alignment in O3-based atomic-layer-deposited AlOx on crystalline Si for photovoltaic applications

Norihiro Ikeno; Yoshihiro Yamashita; Hiroshi Oji; Shohei Miki; Koji Arafune; Haruhiko Yoshida; Shin Ichi Satoh; Ichiro Hirosawa; Toyohiro Chikyow; Atsushi Ogura

doi:10.7567/JJAP.54.08KD19

Relationship between passivation properties and band alignment in O3-based atomic-layer-deposited AlO_x on crystalline Si for photovoltaic applications

Norihiro Ikeno, Yoshihiro Yamashita, Hiroshi Oji, Shohei Miki, Koji Arafune, Haruhiko Yoshida, Shin Ichi Satoh, Ichiro Hirosawa, Toyohiro Chikyow, Atsushi Ogura

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The passivation properties and band structures in aluminum oxide (AlO_x) deposited by ozone-based atomic layer deposition (ALD) at room temperature on p-type crystalline silicon were investigated by X-ray photoelectron spectroscopy (XPS). The effective carrier lifetime depends on the thickness of AlO_x films, since the field effects induced in the films by fixed charges depend on film thickness. The fixed charges are different by two orders of magnitude between films with thicknesses of 10 and 30 nm. At the 30-nm-thick AlO_x/Si interface, the completely accumulated band bending of the Si surface was observed. On the other hand, a thin depletion layer was formed at the 10-nm-thick AlO_x/Si interface. From the timedependent XPS measurements, a hole trap was observed toward AlO_x, in which trapping centers existed.

Original language	English
Article number	08KD19
Journal	Japanese journal of applied physics
Volume	54
Issue number	8
DOIs	https://doi.org/10.7567/JJAP.54.08KD19
Publication status	Published - 2015 Aug 1
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.7567/JJAP.54.08KD19

Cite this

Ikeno, N., Yamashita, Y., Oji, H., Miki, S., Arafune, K., Yoshida, H., Satoh, S. I., Hirosawa, I., Chikyow, T., & Ogura, A. (2015). Relationship between passivation properties and band alignment in O3-based atomic-layer-deposited AlO_x on crystalline Si for photovoltaic applications. Japanese journal of applied physics, 54(8), [08KD19]. https://doi.org/10.7567/JJAP.54.08KD19

Relationship between passivation properties and band alignment in O3-based atomic-layer-deposited AlO_x on crystalline Si for photovoltaic applications. / Ikeno, Norihiro; Yamashita, Yoshihiro; Oji, Hiroshi; Miki, Shohei; Arafune, Koji; Yoshida, Haruhiko; Satoh, Shin Ichi; Hirosawa, Ichiro; Chikyow, Toyohiro; Ogura, Atsushi.

In: Japanese journal of applied physics, Vol. 54, No. 8, 08KD19, 01.08.2015.

Research output: Contribution to journal › Article › peer-review

Ikeno, N, Yamashita, Y, Oji, H, Miki, S, Arafune, K, Yoshida, H, Satoh, SI, Hirosawa, I, Chikyow, T & Ogura, A 2015, 'Relationship between passivation properties and band alignment in O3-based atomic-layer-deposited AlO_x on crystalline Si for photovoltaic applications', Japanese journal of applied physics, vol. 54, no. 8, 08KD19. https://doi.org/10.7567/JJAP.54.08KD19

Ikeno, Norihiro ; Yamashita, Yoshihiro ; Oji, Hiroshi ; Miki, Shohei ; Arafune, Koji ; Yoshida, Haruhiko ; Satoh, Shin Ichi ; Hirosawa, Ichiro ; Chikyow, Toyohiro ; Ogura, Atsushi. / Relationship between passivation properties and band alignment in O3-based atomic-layer-deposited AlO_x on crystalline Si for photovoltaic applications. In: Japanese journal of applied physics. 2015 ; Vol. 54, No. 8.

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abstract = "The passivation properties and band structures in aluminum oxide (AlOx) deposited by ozone-based atomic layer deposition (ALD) at room temperature on p-type crystalline silicon were investigated by X-ray photoelectron spectroscopy (XPS). The effective carrier lifetime depends on the thickness of AlOx films, since the field effects induced in the films by fixed charges depend on film thickness. The fixed charges are different by two orders of magnitude between films with thicknesses of 10 and 30 nm. At the 30-nm-thick AlOx/Si interface, the completely accumulated band bending of the Si surface was observed. On the other hand, a thin depletion layer was formed at the 10-nm-thick AlOx/Si interface. From the timedependent XPS measurements, a hole trap was observed toward AlOx, in which trapping centers existed.",

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