TY - JOUR
T1 - Relationship between passivation properties and band alignment in O3-based atomic-layer-deposited AlOx on crystalline Si for photovoltaic applications
AU - Ikeno, Norihiro
AU - Yamashita, Yoshihiro
AU - Oji, Hiroshi
AU - Miki, Shohei
AU - Arafune, Koji
AU - Yoshida, Haruhiko
AU - Satoh, Shin Ichi
AU - Hirosawa, Ichiro
AU - Chikyow, Toyohiro
AU - Ogura, Atsushi
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015/8/1
Y1 - 2015/8/1
N2 - The passivation properties and band structures in aluminum oxide (AlOx) deposited by ozone-based atomic layer deposition (ALD) at room temperature on p-type crystalline silicon were investigated by X-ray photoelectron spectroscopy (XPS). The effective carrier lifetime depends on the thickness of AlOx films, since the field effects induced in the films by fixed charges depend on film thickness. The fixed charges are different by two orders of magnitude between films with thicknesses of 10 and 30 nm. At the 30-nm-thick AlOx/Si interface, the completely accumulated band bending of the Si surface was observed. On the other hand, a thin depletion layer was formed at the 10-nm-thick AlOx/Si interface. From the timedependent XPS measurements, a hole trap was observed toward AlOx, in which trapping centers existed.
AB - The passivation properties and band structures in aluminum oxide (AlOx) deposited by ozone-based atomic layer deposition (ALD) at room temperature on p-type crystalline silicon were investigated by X-ray photoelectron spectroscopy (XPS). The effective carrier lifetime depends on the thickness of AlOx films, since the field effects induced in the films by fixed charges depend on film thickness. The fixed charges are different by two orders of magnitude between films with thicknesses of 10 and 30 nm. At the 30-nm-thick AlOx/Si interface, the completely accumulated band bending of the Si surface was observed. On the other hand, a thin depletion layer was formed at the 10-nm-thick AlOx/Si interface. From the timedependent XPS measurements, a hole trap was observed toward AlOx, in which trapping centers existed.
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U2 - 10.7567/JJAP.54.08KD19
DO - 10.7567/JJAP.54.08KD19
M3 - Article
AN - SCOPUS:84938492881
VL - 54
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8
M1 - 08KD19
ER -