Relationship between optical dielectric constant and XPS relative chemical shift of 1s and 2p levels for dielectric compounds

K. Hirose, H. Suzuki, H. Nohira, E. Ikenaga, D. Kobayashi, T. Hattori

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We find a new relationship between the optical dielectric constant of Al dielectric films and their chemical shifts measured by X-ray photoelectron spectroscopy (XPS). We measure the difference between core-level binding energy shift for Al 1s and core-level binding energy shift for Al 2p, ΔE 1s - ΔE2p, for AlN using high-resolution high-energy synchrotron radiation. We find that ΔE1s - ΔE 2p correlates well with the optical dielectric constants of Al, AlN, and Al2O3. This is consistent with the case of our previously reported Si compounds. First-principles calculations are performed to determine the mechanism behind the observed correlation.

Original languageEnglish
Article number012011
JournalJournal of Physics: Conference Series
Volume100
Issue number1
DOIs
Publication statusPublished - 2008 Mar 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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