Relationship between optical dielectric constant and XPS relative chemical shift of 1s and 2p levels for dielectric compounds

K. Hirose, H. Suzuki, H. Nohira, E. Ikenaga, D. Kobayashi, T. Hattori

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    We find a new relationship between the optical dielectric constant of Al dielectric films and their chemical shifts measured by X-ray photoelectron spectroscopy (XPS). We measure the difference between core-level binding energy shift for Al 1s and core-level binding energy shift for Al 2p, ΔE 1s - ΔE2p, for AlN using high-resolution high-energy synchrotron radiation. We find that ΔE1s - ΔE 2p correlates well with the optical dielectric constants of Al, AlN, and Al2O3. This is consistent with the case of our previously reported Si compounds. First-principles calculations are performed to determine the mechanism behind the observed correlation.

    Original languageEnglish
    Article number012011
    JournalJournal of Physics: Conference Series
    Volume100
    Issue number1
    DOIs
    Publication statusPublished - 2008 Mar 1

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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