Relationship between impurity (B or P) and carrier concentration in SiGe(C) epitaxial film produced by thermal treatment

Jintae Noh, Shinobu Takehiro, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Relationship between impurity (B or P) and carrier concentration in Si 1-x-y Ge x C y epitaxial films (0.22≤x≤0.7, 0≤y≤0.02) produced by thermal treatment has been investigated. In the case of the B-doped Si 1-x Ge x films with B concentration of 10 21 cm -3 , the carrier concentration slightly decreases with increasing temperature up to 800°C. Because the lattice constant of the film becomes larger with heat treatment, it is suggested that B clustering proceeds with heat treatment, in other words, the epitaxial film is grown in a non-equilibrium for B. In the case of the P-doped Si 1-x Ge x films with P concentration of 10 20 cm -3 , the carrier concentration scarcely changes with heat treatment for lower Ge fraction (x≤0.44). For higher Ge fraction (x = 0.7), the carrier concentration becomes two times higher than that of as-deposited film after heat treatment at 800°C. Because the lattice constant of the film becomes smaller with heat treatment, it is suggested that the solid solubility of electrically active P atoms becomes higher due to the generation of substitutional P atoms at higher temperature. In the P-doped Si 0.54 Ge 0.44 C 0.02 film, it is considered that the generation of substitutional P atoms is enhanced by the localization of C atoms into the interstitial site due to heat treatment.

Original languageEnglish
Pages (from-to)77-81
Number of pages5
JournalApplied Surface Science
Volume224
Issue number1-4
DOIs
Publication statusPublished - 2004 Mar 15

Keywords

  • B clustering
  • Carrier concentration
  • Impurity
  • Si Ge C
  • Solid solubility

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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