TY - JOUR
T1 - Relationship between impurity (B or P) and carrier concentration in SiGe(C) epitaxial film produced by thermal treatment
AU - Noh, Jintae
AU - Takehiro, Shinobu
AU - Sakuraba, Masao
AU - Murota, Junichi
N1 - Funding Information:
This study was partially supported by the Public Participation Program for the Promotion of Info. Communications Technology R&D from the Telecommunications Advancement Organization of Japan, and a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.
PY - 2004/3/15
Y1 - 2004/3/15
N2 - Relationship between impurity (B or P) and carrier concentration in Si 1-x-y Ge x C y epitaxial films (0.22≤x≤0.7, 0≤y≤0.02) produced by thermal treatment has been investigated. In the case of the B-doped Si 1-x Ge x films with B concentration of 10 21 cm -3 , the carrier concentration slightly decreases with increasing temperature up to 800°C. Because the lattice constant of the film becomes larger with heat treatment, it is suggested that B clustering proceeds with heat treatment, in other words, the epitaxial film is grown in a non-equilibrium for B. In the case of the P-doped Si 1-x Ge x films with P concentration of 10 20 cm -3 , the carrier concentration scarcely changes with heat treatment for lower Ge fraction (x≤0.44). For higher Ge fraction (x = 0.7), the carrier concentration becomes two times higher than that of as-deposited film after heat treatment at 800°C. Because the lattice constant of the film becomes smaller with heat treatment, it is suggested that the solid solubility of electrically active P atoms becomes higher due to the generation of substitutional P atoms at higher temperature. In the P-doped Si 0.54 Ge 0.44 C 0.02 film, it is considered that the generation of substitutional P atoms is enhanced by the localization of C atoms into the interstitial site due to heat treatment.
AB - Relationship between impurity (B or P) and carrier concentration in Si 1-x-y Ge x C y epitaxial films (0.22≤x≤0.7, 0≤y≤0.02) produced by thermal treatment has been investigated. In the case of the B-doped Si 1-x Ge x films with B concentration of 10 21 cm -3 , the carrier concentration slightly decreases with increasing temperature up to 800°C. Because the lattice constant of the film becomes larger with heat treatment, it is suggested that B clustering proceeds with heat treatment, in other words, the epitaxial film is grown in a non-equilibrium for B. In the case of the P-doped Si 1-x Ge x films with P concentration of 10 20 cm -3 , the carrier concentration scarcely changes with heat treatment for lower Ge fraction (x≤0.44). For higher Ge fraction (x = 0.7), the carrier concentration becomes two times higher than that of as-deposited film after heat treatment at 800°C. Because the lattice constant of the film becomes smaller with heat treatment, it is suggested that the solid solubility of electrically active P atoms becomes higher due to the generation of substitutional P atoms at higher temperature. In the P-doped Si 0.54 Ge 0.44 C 0.02 film, it is considered that the generation of substitutional P atoms is enhanced by the localization of C atoms into the interstitial site due to heat treatment.
KW - B clustering
KW - Carrier concentration
KW - Impurity
KW - Si Ge C
KW - Solid solubility
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U2 - 10.1016/j.apsusc.2003.08.046
DO - 10.1016/j.apsusc.2003.08.046
M3 - Article
AN - SCOPUS:1142268150
VL - 224
SP - 77
EP - 81
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 1-4
ER -