Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth

Noritaka Usami, Ryusuke Yokoyama, Isao Takahashi, Kentaro Kutsukake, Kozo Fujiwara, Kazuo Nakajima

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)

Abstract

We attempted to clarify relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth. Systematic variation of grain boundary structures was realized by employing dendritic nucleation at the initial stage of crystal growth. Etch-pit observation revealed that the contact angle of adjacent dendrite crystals to form a grain boundary affects generation of dislocations. Experimentally observed dislocation density was found to be well correlated with shear stress around the grain boundary calculated by finite element analysis.

Original languageEnglish
Article number013511
JournalJournal of Applied Physics
Volume107
Issue number1
DOIs
Publication statusPublished - 2010 Feb 5

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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