Relationship between gallium concentration and resistivity of gallium-doped czochralski silicon crystals: Investigation of a conversion curve

Takeshi Hoshikawa, Xinming Huang, Keigo Hoshikawa, Satoshi Uda

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The relationship between gallium (Ga) concentration and resistivity was studied in Ga-doped Czochralski (CZ) silicon (Si) single crystals in the dopant concentration range from 1 × 1014 to 2 × 1018 atoms/cm3 by the four-point probe method, inductively coupled plasma (ICP) analysis, and Hall-effect measurement. The resistivity of Ga-doped Si was found to be larger than that of B-doped Si, because Ga is not fully ionized at Ga concentrations higher than 1016 atoms/cm3 at 300 K. A conversion curve from resistivity to Ga concentration in the range from 1 × 1014 to 1 × 1017 atoms/cm3 is proposed.

Original languageEnglish
Pages (from-to)8691-8695
Number of pages5
JournalJapanese journal of applied physics
Volume47
Issue number12
DOIs
Publication statusPublished - 2008 Dec 19
Externally publishedYes

Keywords

  • Acceptor concentration
  • CZ-si crystal
  • Conductivity mobility
  • Conversion curve
  • Ga concentration
  • Ga-doped silicon
  • Resistivity
  • Solar cell

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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