Relationship between band alignment and chemical states upon annealing in HfSiON/SiON stacked films on Si substrates

T. Tanimura, S. Toyoda, H. Kamada, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, K. Ikeda

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We have investigated the relationship between band alignment and chemical states in HfSiON/SiON stacked films on Si substrates by photoemission spectroscopy and x-ray absorption spectroscopy. Valence-band maxima mainly derived from N 2p states in HfSiON films are closely related to N-Hf bonding configurations. The valence-band offset for a thick HfSiON film is smaller than that for a thin HfSiON film, due to the amount of N-Hf bonding states. Since N-Hf bonding states decrease upon annealing, thickness dependence of valence-band offset can be eliminated. On the other hand, the conduction-band offset does not depend on either the thickness or annealing.

Original languageEnglish
Article number183113
JournalApplied Physics Letters
Volume95
Issue number18
DOIs
Publication statusPublished - 2009 Nov 16
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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