Relation between oxygen vacancy and ferroelastic domain switching in tetragonal zirconia pseudo-single crystals

Takanori Kiguchi, Atsushi Saiki, Kazuo Shinozaki, Nobuyasu Mizutani

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Electrochemically reduced 3 mol% Y2O3-ZrO2 crystals were unidirectionally compressed in the range of 100 to 1000 MPa at temperatures from 550 to 800°C to examine the effect of oxygen vacancy on ferroelastic domain switching. The switching amount of all the samples increased with increasing temperature. The switching amount of the cathode-side of reduced samples was less than that of the anode-side and as-grown samples compressed under the same stress. These results were interpreted using the model in which oxygen vacancy pins the domain wall. Domain switching occurred step wise, and the critical stress was not influenced by the oxygen vacancy introduced by reduction.

Original languageEnglish
Pages (from-to)1106-1111
Number of pages6
JournalJournal of the Ceramic Society of Japan
Volume104
Issue number12
DOIs
Publication statusPublished - 1996
Externally publishedYes

Keywords

  • Critical stress
  • Domain wall
  • Ferroelastic domain switching
  • Oxygen ion
  • Oxygen vacancy
  • Partially stabilized zirconia
  • Pinning
  • Switching amount

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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