TY - JOUR
T1 - Relation between oxidation rate and oxidation-induced strain at SiO 2/Si(001) interfaces during thermal oxidation
AU - Ogawa, Shuichi
AU - Tang, Jiayi
AU - Yoshigoe, Akitaka
AU - Ishidzuka, Shinji
AU - Teraoka, Yuden
AU - Takakuwa, Yuji
PY - 2013/11
Y1 - 2013/11
N2 - To experimentally verify the Si oxidation reaction model mediated by point defect (emitted Si atoms and their vacancies) generation due to oxidation-induced strain, real-time photoelectron spectroscopy using synchrotron radiation was employed to simultaneously evaluate the amount of oxidation-induced strained Si atoms at the SiO2/Si interface, oxidation state, and oxidation rate during oxidation on n-type Si(001) surfaces with O2 gas. It is found that both the oxidation rate and the amount of strained Si atoms at the completion of the first-oxide-layer growth decrease gradually with increasing temperature from 300 to 550 °C, where the oxide grows in the Langmuir-type adsorption manner. It is found that the interface strain and oxidation rate have a strong correlation. We discuss the reason for the oxide coverage and oxidation temperature dependences of interfacial strain from the viewpoint of the behavior of adsorbed oxygen during the first-oxide-layer growth.
AB - To experimentally verify the Si oxidation reaction model mediated by point defect (emitted Si atoms and their vacancies) generation due to oxidation-induced strain, real-time photoelectron spectroscopy using synchrotron radiation was employed to simultaneously evaluate the amount of oxidation-induced strained Si atoms at the SiO2/Si interface, oxidation state, and oxidation rate during oxidation on n-type Si(001) surfaces with O2 gas. It is found that both the oxidation rate and the amount of strained Si atoms at the completion of the first-oxide-layer growth decrease gradually with increasing temperature from 300 to 550 °C, where the oxide grows in the Langmuir-type adsorption manner. It is found that the interface strain and oxidation rate have a strong correlation. We discuss the reason for the oxide coverage and oxidation temperature dependences of interfacial strain from the viewpoint of the behavior of adsorbed oxygen during the first-oxide-layer growth.
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U2 - 10.7567/JJAP.52.110128
DO - 10.7567/JJAP.52.110128
M3 - Article
AN - SCOPUS:84889005817
SN - 0021-4922
VL - 52
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 11 PART 1
M1 - 110128
ER -