Relation between hot-carrier light emission and kink effect in poly-Si thin film transistors

M. Koyanagi, H. Kurino, T. Hashimoto, H. Mori, K. Hata, Y. Hiruma, T. Fujimori, I. W. Wu, A. G. Lewis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

18 Citations (Scopus)


The kink effect in poly-Si TFTs (thin-film transistors) is evaluated by using a novel method based on kink current and hot carrier light emission measurements. It is revealed by examining the influence of the hydrogenation treatment on the kink current and measuring the temperature dependence of the kink current that the kink effect is significantly influenced by the grain boundary traps. Furthermore, it is found from the hot carrier light emission measurement that the energy distribution of hot carriers is not described by the Maxwell-Boltzmann distribution. The comparison between the kink current and the emitted light intensity suggests that both kink current and light emission basically originated from the hot carriers although the kink current characteristics are not always completely correlated with the light emission properties.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780302435
Publication statusPublished - 1991 Jan 1
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 1991 Dec 81991 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


OtherInternational Electron Devices Meeting, IEDM 1991
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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