Reflection electron diffraction intensity oscillation during molecular beam epitaxial growth of (GaAs)n/(InAs)n superlattice semiconductor

H. Ohno, R. Katsumi, H. Hasegawa

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)
Original languageEnglish
Pages (from-to)598-599
Number of pages2
JournalSurface Science
Volume174
Issue number1-3
DOIs
Publication statusPublished - 1986 Aug 3
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this