Reflection and refraction of ballistic electrons through different carrier concentration regions

Yoshino K. Fukai, Seigo Tarucha, Yoshiro Hirayama, Yasuhiro Tokura, Tadashi Saku

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Transmission and reflection characteristics of ballistic electrons are studied in a macroscopic four-terminal square device with a strip Schottky gate placed so as to bisect the device. Since the gate is negatively biased, a bend resistance peak at zero magnetic field, which is induced by ballistic electron injection into an opposite voltage probe, varies from positive to negative, and a magnetic focusing peak shifts to a lower field. These phenomena arise from the reflection of ballistic electrons crossing regions of different electron densities. The transmission and reflection probabilities are determined as a function of gate voltage, and are related to the change in the refractive index of ballistic electrons.

Original languageEnglish
Pages (from-to)106-108
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number1
DOIs
Publication statusPublished - 1992 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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