Abstract
Transmission and reflection characteristics of ballistic electrons are studied in a macroscopic four-terminal square device with a strip Schottky gate placed so as to bisect the device. Since the gate is negatively biased, a bend resistance peak at zero magnetic field, which is induced by ballistic electron injection into an opposite voltage probe, varies from positive to negative, and a magnetic focusing peak shifts to a lower field. These phenomena arise from the reflection of ballistic electrons crossing regions of different electron densities. The transmission and reflection probabilities are determined as a function of gate voltage, and are related to the change in the refractive index of ballistic electrons.
Original language | English |
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Pages (from-to) | 106-108 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 60 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1992 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)