Reflection and refraction of ballistic electrons through different carrier concentration regions

Yoshino K. Fukai; Seigo Tarucha; Yoshiro Hirayama; Yasuhiro Tokura; Tadashi Saku

doi:10.1063/1.107362

Reflection and refraction of ballistic electrons through different carrier concentration regions

Yoshino K. Fukai, Seigo Tarucha, Yoshiro Hirayama, Yasuhiro Tokura, Tadashi Saku

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Transmission and reflection characteristics of ballistic electrons are studied in a macroscopic four-terminal square device with a strip Schottky gate placed so as to bisect the device. Since the gate is negatively biased, a bend resistance peak at zero magnetic field, which is induced by ballistic electron injection into an opposite voltage probe, varies from positive to negative, and a magnetic focusing peak shifts to a lower field. These phenomena arise from the reflection of ballistic electrons crossing regions of different electron densities. The transmission and reflection probabilities are determined as a function of gate voltage, and are related to the change in the refractive index of ballistic electrons.

Original language	English
Pages (from-to)	106-108
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	1
DOIs	https://doi.org/10.1063/1.107362
Publication status	Published - 1992
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.107362

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title = "Reflection and refraction of ballistic electrons through different carrier concentration regions",

abstract = "Transmission and reflection characteristics of ballistic electrons are studied in a macroscopic four-terminal square device with a strip Schottky gate placed so as to bisect the device. Since the gate is negatively biased, a bend resistance peak at zero magnetic field, which is induced by ballistic electron injection into an opposite voltage probe, varies from positive to negative, and a magnetic focusing peak shifts to a lower field. These phenomena arise from the reflection of ballistic electrons crossing regions of different electron densities. The transmission and reflection probabilities are determined as a function of gate voltage, and are related to the change in the refractive index of ballistic electrons.",

author = "Fukai, {Yoshino K.} and Seigo Tarucha and Yoshiro Hirayama and Yasuhiro Tokura and Tadashi Saku",

year = "1992",

doi = "10.1063/1.107362",

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journal = "Applied Physics Letters",

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T1 - Reflection and refraction of ballistic electrons through different carrier concentration regions

AU - Fukai, Yoshino K.

AU - Tarucha, Seigo

AU - Hirayama, Yoshiro

AU - Tokura, Yasuhiro

AU - Saku, Tadashi

PY - 1992

Y1 - 1992

N2 - Transmission and reflection characteristics of ballistic electrons are studied in a macroscopic four-terminal square device with a strip Schottky gate placed so as to bisect the device. Since the gate is negatively biased, a bend resistance peak at zero magnetic field, which is induced by ballistic electron injection into an opposite voltage probe, varies from positive to negative, and a magnetic focusing peak shifts to a lower field. These phenomena arise from the reflection of ballistic electrons crossing regions of different electron densities. The transmission and reflection probabilities are determined as a function of gate voltage, and are related to the change in the refractive index of ballistic electrons.

AB - Transmission and reflection characteristics of ballistic electrons are studied in a macroscopic four-terminal square device with a strip Schottky gate placed so as to bisect the device. Since the gate is negatively biased, a bend resistance peak at zero magnetic field, which is induced by ballistic electron injection into an opposite voltage probe, varies from positive to negative, and a magnetic focusing peak shifts to a lower field. These phenomena arise from the reflection of ballistic electrons crossing regions of different electron densities. The transmission and reflection probabilities are determined as a function of gate voltage, and are related to the change in the refractive index of ballistic electrons.

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JF - Applied Physics Letters

SN - 0003-6951

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Reflection and refraction of ballistic electrons through different carrier concentration regions

Abstract

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