Abstract
Ingenious solid phase epitaxy of ThCr2Si2-type Y 2O2Bi thin film with a Bi2- square net was developed. A Y2O3 amorphous thin film with Y and Bi powders was heated in two steps under reductive atmosphere on a nonoxide lattice-matched CaF2 substrate. This procedure was indispensable for the epitaxial growth of Y2O2Bi, circumventing the formation of the C-rare earth type (Y,Bi)2O3 with Bi 3+. Highly oxidizable Y metal was a key to accomplish the unusual reductive state of Bi2-. The lattice-matched CaF2 substrate possessing a similar structure to the Y2O2 2+ unit in Y2O2Bi promoted the spontaneous c-axis orientation of the thin film.
Original language | English |
---|---|
Pages (from-to) | 4227-4229 |
Number of pages | 3 |
Journal | Crystal Growth and Design |
Volume | 14 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2014 Sep 3 |
Externally published | Yes |
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics