Reductive solid phase epitaxy of layered Y2O2Bi with Bi2- square net from (Y, Bi) powders and Y2O3 amorphous thin film

Ryosuke Sei; Tomoteru Fukumura; Tetsuya Hasegawa

doi:10.1021/cg5009297

Reductive solid phase epitaxy of layered Y₂O₂Bi with Bi^2- square net from (Y, Bi) powders and Y₂O₃ amorphous thin film

Ryosuke Sei, Tomoteru Fukumura, Tetsuya Hasegawa

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Ingenious solid phase epitaxy of ThCr₂Si₂-type Y ₂O₂Bi thin film with a Bi^2- square net was developed. A Y₂O₃ amorphous thin film with Y and Bi powders was heated in two steps under reductive atmosphere on a nonoxide lattice-matched CaF₂ substrate. This procedure was indispensable for the epitaxial growth of Y₂O₂Bi, circumventing the formation of the C-rare earth type (Y,Bi)₂O₃ with Bi ³⁺. Highly oxidizable Y metal was a key to accomplish the unusual reductive state of Bi^2-. The lattice-matched CaF₂ substrate possessing a similar structure to the Y₂O₂ ²⁺ unit in Y₂O₂Bi promoted the spontaneous c-axis orientation of the thin film.

Original language	English
Pages (from-to)	4227-4229
Number of pages	3
Journal	Crystal Growth and Design
Volume	14
Issue number	9
DOIs	https://doi.org/10.1021/cg5009297
Publication status	Published - 2014 Sep 3
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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title = "Reductive solid phase epitaxy of layered Y2O2Bi with Bi2- square net from (Y, Bi) powders and Y2O3 amorphous thin film",

abstract = "Ingenious solid phase epitaxy of ThCr2Si2-type Y 2O2Bi thin film with a Bi2- square net was developed. A Y2O3 amorphous thin film with Y and Bi powders was heated in two steps under reductive atmosphere on a nonoxide lattice-matched CaF2 substrate. This procedure was indispensable for the epitaxial growth of Y2O2Bi, circumventing the formation of the C-rare earth type (Y,Bi)2O3 with Bi 3+. Highly oxidizable Y metal was a key to accomplish the unusual reductive state of Bi2-. The lattice-matched CaF2 substrate possessing a similar structure to the Y2O2 2+ unit in Y2O2Bi promoted the spontaneous c-axis orientation of the thin film.",

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T1 - Reductive solid phase epitaxy of layered Y2O2Bi with Bi2- square net from (Y, Bi) powders and Y2O3 amorphous thin film

AU - Sei, Ryosuke

AU - Fukumura, Tomoteru

AU - Hasegawa, Tetsuya

PY - 2014/9/3

Y1 - 2014/9/3

N2 - Ingenious solid phase epitaxy of ThCr2Si2-type Y 2O2Bi thin film with a Bi2- square net was developed. A Y2O3 amorphous thin film with Y and Bi powders was heated in two steps under reductive atmosphere on a nonoxide lattice-matched CaF2 substrate. This procedure was indispensable for the epitaxial growth of Y2O2Bi, circumventing the formation of the C-rare earth type (Y,Bi)2O3 with Bi 3+. Highly oxidizable Y metal was a key to accomplish the unusual reductive state of Bi2-. The lattice-matched CaF2 substrate possessing a similar structure to the Y2O2 2+ unit in Y2O2Bi promoted the spontaneous c-axis orientation of the thin film.

AB - Ingenious solid phase epitaxy of ThCr2Si2-type Y 2O2Bi thin film with a Bi2- square net was developed. A Y2O3 amorphous thin film with Y and Bi powders was heated in two steps under reductive atmosphere on a nonoxide lattice-matched CaF2 substrate. This procedure was indispensable for the epitaxial growth of Y2O2Bi, circumventing the formation of the C-rare earth type (Y,Bi)2O3 with Bi 3+. Highly oxidizable Y metal was a key to accomplish the unusual reductive state of Bi2-. The lattice-matched CaF2 substrate possessing a similar structure to the Y2O2 2+ unit in Y2O2Bi promoted the spontaneous c-axis orientation of the thin film.

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Reductive solid phase epitaxy of layered Y₂O₂Bi with Bi^2- square net from (Y, Bi) powders and Y₂O₃ amorphous thin film

Abstract

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