Reductive solid phase epitaxy of layered Y2O2Bi with Bi2- square net from (Y, Bi) powders and Y2O3 amorphous thin film

Ryosuke Sei, Tomoteru Fukumura, Tetsuya Hasegawa

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Ingenious solid phase epitaxy of ThCr2Si2-type Y 2O2Bi thin film with a Bi2- square net was developed. A Y2O3 amorphous thin film with Y and Bi powders was heated in two steps under reductive atmosphere on a nonoxide lattice-matched CaF2 substrate. This procedure was indispensable for the epitaxial growth of Y2O2Bi, circumventing the formation of the C-rare earth type (Y,Bi)2O3 with Bi 3+. Highly oxidizable Y metal was a key to accomplish the unusual reductive state of Bi2-. The lattice-matched CaF2 substrate possessing a similar structure to the Y2O2 2+ unit in Y2O2Bi promoted the spontaneous c-axis orientation of the thin film.

Original languageEnglish
Pages (from-to)4227-4229
Number of pages3
JournalCrystal Growth and Design
Volume14
Issue number9
DOIs
Publication statusPublished - 2014 Sep 3
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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