Reduction of x-ray irradiation-induced pattern displacement of SiN membranes using H+ ion implantation technique

Kinya Ashikaga, Shinji Tsuboi, Yoshio Yamashita, Tsuneaki Ohta, Syuichi Noda, Masanori Kasai, Hiroshi Hoga

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

We have developed a technique for improving X-ray irradiation stability of silicon nitride (SiN) X-ray mask membrane using H+ implantation. This technique can realize the reduction of X-ray irradiation-induced pattern displacement to less than 20 nm after X-ray absorption with a dose of 30 MJ/cm3 by optimizing the implantation dose to 4 × 1015/cm2 at 150 keV. It is found that the mechanism of the reduction of the displacement is that the stress change after X-ray absorption in the implanted layer (top to 1.1 μm in depth) of SiN film compensates the stress change in the unimplanted layer (1.1 to 2.0 μm (bottom) in depth).

Original languageEnglish
Pages6725-6728
Number of pages4
Publication statusPublished - 1995 Dec 1
EventProceedings of the 1995 8th International MicroProcess Conference, MPC'95 - Sendai, Jpn
Duration: 1995 Jul 171995 Jul 20

Other

OtherProceedings of the 1995 8th International MicroProcess Conference, MPC'95
CitySendai, Jpn
Period95/7/1795/7/20

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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