Reduction of x-ray irradiation-induced pattern displacement of sin membranes using H+ion implantation technique

Kinya Ashikaga, Shinji Tsuboi, Yoshio Yamashita, Tsuneaki Ohta, Syuichi Noda, Masanori Kasai, Hiroshi Hoga

Research output: Contribution to journalArticle

Abstract

We have developed a technique for improving X-ray irradiation stability of silicon nitride (SiN) X-ray mask membrane using H+implantation. This technique can realize the reduction of X-ray irradiation-induced patterndisplacement to less than 20 nm after X-ray absorption with a dose of 30 MJ/cm3by optimizing the implantationdose to 4 x 1015/cm2at 150 keV. It is found that the mechanism of the reduction of the displacement is that thestress change after X-ray absorption in the implanted layer (top to 1.1 μl in depth) of SiN film compensates thestress change in the unimplanted layer (l.l to 2.0 μn (bottom) in depth).

Original languageEnglish
Pages (from-to)6655-6657
Number of pages3
JournalJapanese journal of applied physics
Volume34
Issue number12
DOIs
Publication statusPublished - 1995 Dec

Keywords

  • Silicon nitride
  • Synchrotron radiation
  • X-ray irradiation-induced pattern displacemention implantation
  • X-ray lithography

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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