Reduction of x-ray irradiation-induced pattern displacement of sin membranes using H+ion implantation technique

Kinya Ashikaga; Shinji Tsuboi; Yoshio Yamashita; Tsuneaki Ohta; Syuichi Noda; Masanori Kasai; Hiroshi Hoga

doi:10.1143/JJAP.34.6725

Reduction of x-ray irradiation-induced pattern displacement of sin membranes using H⁺ion implantation technique

Kinya Ashikaga, Shinji Tsuboi, Yoshio Yamashita, Tsuneaki Ohta, Syuichi Noda, Masanori Kasai, Hiroshi Hoga

Micro System Integration Center (μSIC)

Research output: Contribution to journal › Article

Abstract

We have developed a technique for improving X-ray irradiation stability of silicon nitride (SiN) X-ray mask membrane using H⁺implantation. This technique can realize the reduction of X-ray irradiation-induced patterndisplacement to less than 20 nm after X-ray absorption with a dose of 30 MJ/cm³by optimizing the implantationdose to 4 x 10¹⁵/cm²at 150 keV. It is found that the mechanism of the reduction of the displacement is that thestress change after X-ray absorption in the implanted layer (top to 1.1 μl in depth) of SiN film compensates thestress change in the unimplanted layer (l.l to 2.0 μn (bottom) in depth).

Original language	English
Pages (from-to)	6655-6657
Number of pages	3
Journal	Japanese journal of applied physics
Volume	34
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.34.6725
Publication status	Published - 1995 Dec

Keywords

Silicon nitride
Synchrotron radiation
X-ray irradiation-induced pattern displacemention implantation
X-ray lithography

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.34.6725

Fingerprint Dive into the research topics of 'Reduction of x-ray irradiation-induced pattern displacement of sin membranes using H<sup>+</sup>ion implantation technique'. Together they form a unique fingerprint.

Cite this

Ashikaga, K., Tsuboi, S., Yamashita, Y., Ohta, T., Noda, S., Kasai, M., & Hoga, H. (1995). Reduction of x-ray irradiation-induced pattern displacement of sin membranes using H⁺ion implantation technique. Japanese journal of applied physics, 34(12), 6655-6657. https://doi.org/10.1143/JJAP.34.6725

@article{267d4c4db2ee4202a8d88ca31a05b334,

title = "Reduction of x-ray irradiation-induced pattern displacement of sin membranes using H+ion implantation technique",

abstract = "We have developed a technique for improving X-ray irradiation stability of silicon nitride (SiN) X-ray mask membrane using H+implantation. This technique can realize the reduction of X-ray irradiation-induced patterndisplacement to less than 20 nm after X-ray absorption with a dose of 30 MJ/cm3by optimizing the implantationdose to 4 x 1015/cm2at 150 keV. It is found that the mechanism of the reduction of the displacement is that thestress change after X-ray absorption in the implanted layer (top to 1.1 μl in depth) of SiN film compensates thestress change in the unimplanted layer (l.l to 2.0 μn (bottom) in depth).",

keywords = "Silicon nitride, Synchrotron radiation, X-ray irradiation-induced pattern displacemention implantation, X-ray lithography",

author = "Kinya Ashikaga and Shinji Tsuboi and Yoshio Yamashita and Tsuneaki Ohta and Syuichi Noda and Masanori Kasai and Hiroshi Hoga",

year = "1995",

month = dec,

doi = "10.1143/JJAP.34.6725",

language = "English",

volume = "34",

pages = "6655--6657",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "12",

}

TY - JOUR

T1 - Reduction of x-ray irradiation-induced pattern displacement of sin membranes using H+ion implantation technique

AU - Ashikaga, Kinya

AU - Tsuboi, Shinji

AU - Yamashita, Yoshio

AU - Ohta, Tsuneaki

AU - Noda, Syuichi

AU - Kasai, Masanori

AU - Hoga, Hiroshi

PY - 1995/12

Y1 - 1995/12

N2 - We have developed a technique for improving X-ray irradiation stability of silicon nitride (SiN) X-ray mask membrane using H+implantation. This technique can realize the reduction of X-ray irradiation-induced patterndisplacement to less than 20 nm after X-ray absorption with a dose of 30 MJ/cm3by optimizing the implantationdose to 4 x 1015/cm2at 150 keV. It is found that the mechanism of the reduction of the displacement is that thestress change after X-ray absorption in the implanted layer (top to 1.1 μl in depth) of SiN film compensates thestress change in the unimplanted layer (l.l to 2.0 μn (bottom) in depth).

AB - We have developed a technique for improving X-ray irradiation stability of silicon nitride (SiN) X-ray mask membrane using H+implantation. This technique can realize the reduction of X-ray irradiation-induced patterndisplacement to less than 20 nm after X-ray absorption with a dose of 30 MJ/cm3by optimizing the implantationdose to 4 x 1015/cm2at 150 keV. It is found that the mechanism of the reduction of the displacement is that thestress change after X-ray absorption in the implanted layer (top to 1.1 μl in depth) of SiN film compensates thestress change in the unimplanted layer (l.l to 2.0 μn (bottom) in depth).

KW - Silicon nitride

KW - Synchrotron radiation

KW - X-ray irradiation-induced pattern displacemention implantation

KW - X-ray lithography

UR - http://www.scopus.com/inward/record.url?scp=84956276212&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84956276212&partnerID=8YFLogxK

U2 - 10.1143/JJAP.34.6725

DO - 10.1143/JJAP.34.6725

M3 - Article

AN - SCOPUS:84956276212

VL - 34

SP - 6655

EP - 6657

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 12

ER -