Reduction of ultraviolet-radiation damage in SiO2 using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes

Mitsuru Okigawa; Yasushi Ishikawa; Seiji Samukawa

Reduction of ultraviolet-radiation damage in SiO₂ using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes

Mitsuru Okigawa, Yasushi Ishikawa, Seiji Samukawa

Innovative Energy Research Center

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

The plasma-induced electric current in SiO₂ was measured to investigate the influence of vacuum-ultra/violet (VUV) radiation dark current in He plasma. Dark current in CCD image sensors was caused by VUV light emitted by plasmas. Two types of devices were used to perform time-resolved-measurement experiments in pulse-time-modulated He plasma (He-TM plasma). The results show that the TM plasma does not reduce the ion-induced current, but completely reduces the photoinduced current in SiO₂.

Original language	English
Pages (from-to)	2448-2454
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	6
Publication status	Published - 2003 Nov

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

Reduction of ultraviolet-radiation damage in SiO₂ using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes. / Okigawa, Mitsuru; Ishikawa, Yasushi; Samukawa, Seiji.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 6, 11.2003, p. 2448-2454.

Research output: Contribution to journal › Article › peer-review

@article{95a3ae1c215147018e0b19a68b02dd83,

title = "Reduction of ultraviolet-radiation damage in SiO2 using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes",

abstract = "The plasma-induced electric current in SiO2 was measured to investigate the influence of vacuum-ultra/violet (VUV) radiation dark current in He plasma. Dark current in CCD image sensors was caused by VUV light emitted by plasmas. Two types of devices were used to perform time-resolved-measurement experiments in pulse-time-modulated He plasma (He-TM plasma). The results show that the TM plasma does not reduce the ion-induced current, but completely reduces the photoinduced current in SiO2.",

author = "Mitsuru Okigawa and Yasushi Ishikawa and Seiji Samukawa",

year = "2003",

month = nov,

language = "English",

volume = "21",

pages = "2448--2454",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "6",

}

TY - JOUR

T1 - Reduction of ultraviolet-radiation damage in SiO2 using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes

AU - Okigawa, Mitsuru

AU - Ishikawa, Yasushi

AU - Samukawa, Seiji

PY - 2003/11

Y1 - 2003/11

N2 - The plasma-induced electric current in SiO2 was measured to investigate the influence of vacuum-ultra/violet (VUV) radiation dark current in He plasma. Dark current in CCD image sensors was caused by VUV light emitted by plasmas. Two types of devices were used to perform time-resolved-measurement experiments in pulse-time-modulated He plasma (He-TM plasma). The results show that the TM plasma does not reduce the ion-induced current, but completely reduces the photoinduced current in SiO2.

AB - The plasma-induced electric current in SiO2 was measured to investigate the influence of vacuum-ultra/violet (VUV) radiation dark current in He plasma. Dark current in CCD image sensors was caused by VUV light emitted by plasmas. Two types of devices were used to perform time-resolved-measurement experiments in pulse-time-modulated He plasma (He-TM plasma). The results show that the TM plasma does not reduce the ion-induced current, but completely reduces the photoinduced current in SiO2.

UR - http://www.scopus.com/inward/record.url?scp=0942267562&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0942267562&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0942267562

VL - 21

SP - 2448

EP - 2454

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 6

ER -

Reduction of ultraviolet-radiation damage in SiO₂ using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this