Reduction of ultraviolet-radiation damage in SiO2 using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes

Mitsuru Okigawa; Yasushi Ishikawa; Seiji Samukawa

Reduction of ultraviolet-radiation damage in SiO₂ using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes

Mitsuru Okigawa, Yasushi Ishikawa, Seiji Samukawa

Innovative Energy Research Center

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

The plasma-induced electric current in SiO₂ was measured to investigate the influence of vacuum-ultra/violet (VUV) radiation dark current in He plasma. Dark current in CCD image sensors was caused by VUV light emitted by plasmas. Two types of devices were used to perform time-resolved-measurement experiments in pulse-time-modulated He plasma (He-TM plasma). The results show that the TM plasma does not reduce the ion-induced current, but completely reduces the photoinduced current in SiO₂.

Original language	English
Pages (from-to)	2448-2454
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	6
Publication status	Published - 2003 Nov 1

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Reduction of ultraviolet-radiation damage in SiO₂ using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes. / Okigawa, Mitsuru; Ishikawa, Yasushi; Samukawa, Seiji.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 6, 01.11.2003, p. 2448-2454.

Research output: Contribution to journal › Article › peer-review

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Reduction of ultraviolet-radiation damage in SiO2 using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes

Abstract

ASJC Scopus subject areas

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Reduction of ultraviolet-radiation damage in SiO₂ using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes