Reduction of ultraviolet-radiation damage in SiO2 using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes

Mitsuru Okigawa, Yasushi Ishikawa, Seiji Samukawa

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

The plasma-induced electric current in SiO2 was measured to investigate the influence of vacuum-ultra/violet (VUV) radiation dark current in He plasma. Dark current in CCD image sensors was caused by VUV light emitted by plasmas. Two types of devices were used to perform time-resolved-measurement experiments in pulse-time-modulated He plasma (He-TM plasma). The results show that the TM plasma does not reduce the ion-induced current, but completely reduces the photoinduced current in SiO2.

Original languageEnglish
Pages (from-to)2448-2454
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number6
Publication statusPublished - 2003 Nov 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Reduction of ultraviolet-radiation damage in SiO<sub>2</sub> using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes'. Together they form a unique fingerprint.

Cite this