Reduction of ultra-violet-radiation induced damage and its time-resolved measurement using pulse-time-modulated plasma

M. Okigawa, Y. Ishikawa, S. Kumagai, S. Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Plasma-radiation-induced SiO2-damage in inductively coupled He, Ar, and O2 plasmas was investigated by measurements of electrical hole currents generated by the plasmas in SiO2 film using on-wafer monitoring, of electron densities in the plasmas, and of vacuum-ultraviolet (VUV) radiation intensity from the plasmas. The VUV intensities and the hole currents were reduced by pulse-time-modulated (TM) plasma, in spite of the electron densities still remained. This indicates that the TM plasma can reduce the electrical damages that are created by the hole current in the SiO2 of a MOS structure. In TM plasma, the VUV intensity dramatically decayed after the plasma-off time. On the other hand, the electron density gradually decreased with more than three times longer decay constant than the VUV intensity in the He TM plasma. These results show that lowering of electron temperature in the plasma during discharge-off period reduced the VUV intensity. In addition, it was found that the hole-current-decay curve consists of two components, which is also discussed. In charge-coupled-device (CCD) image sensors, an increase in a dark current of the CCD was suppressed by using the TM plasma.

Original languageEnglish
Title of host publication2002 7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002
EditorsCalvin T. Gabriel, Terence Hook, Koji Eriguchi
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages122-125
Number of pages4
ISBN (Electronic)0965157776
DOIs
Publication statusPublished - 2002
Event7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002 - Maui, United States
Duration: 2002 Jun 52002 Jun 7

Publication series

NameInternational Symposium on Plasma Process-Induced Damage, P2ID, Proceedings
Volume2002-January

Other

Other7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002
Country/TerritoryUnited States
CityMaui
Period02/6/502/6/7

Keywords

  • Argon
  • Charge carrier processes
  • Charge coupled devices
  • Density measurement
  • Electrons
  • Helium
  • Plasma density
  • Plasma measurements
  • Plasma temperature
  • Pulse measurements

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

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