Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process

Meng Fang Lin, Xu Gao, Nobuhiko Mitoma, Takio Kizu, Ou Yang Wei, Shinya Aikawa, Toshihide Nabatame, Kazuhito Tsukagoshi

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

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Physics & Astronomy