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Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process
Meng Fang Lin, Xu Gao, Nobuhiko Mitoma, Takio Kizu, Ou Yang Wei, Shinya Aikawa, Toshihide Nabatame, Kazuhito Tsukagoshi
Research output: Contribution to journal › Article › peer-review
9
Citations
(Scopus)