The changes with the number of growth runs in the threshold current density Jth of separate-confinement-heterostructure single-quantum-well laser diodes (SQW-LDs) with alloy and superlattice guide layers are reported. The Jth of SQW-LDs with alloy guide layers decreases with the number of growth runs. The reduction is particularly conspicuous in the devices obtained in the earlier runs. This strong dependence on the number of growth runs suggests that impurity incorporation is somehow involved in the Jth reduction. The recombination lifetimes τ of double-heterostructure and quantum-well structures with different GaAs layer thicknesses d were obtained by a time-resolved photoluminescence measurement using picosecond light pulses. The photoluminescence decay times τPL depend strongly on d. The value of the GaAs bulk nonradiative recombination lifetime τnr b and the interfacial recombination velocity of the interfaces S1 + S2 are deduced from a plot of 1/τ vs. 1/d to be 68 ns and 330 cm/s, respectively. The τ of the quantum-well structure with a 10-nm GaAs well and superlattice barrier was also measured. The interfacial recombination velocity S1 + S2 of this sample is estimated to be less than 16 cm/s.
|Number of pages||2|
|Publication status||Published - 1988 Dec 1|
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