Reduction of the interfacial recombination velocity in GaAs/AlGaAs quantum well structures by superlattice buffer layers

H. Iwata, Hiroyuki Yokoyama, M. Sugimoto, N. Hamao, K. Onabe

Research output: Contribution to conferencePaper

Abstract

The changes with the number of growth runs in the threshold current density Jth of separate-confinement-heterostructure single-quantum-well laser diodes (SQW-LDs) with alloy and superlattice guide layers are reported. The Jth of SQW-LDs with alloy guide layers decreases with the number of growth runs. The reduction is particularly conspicuous in the devices obtained in the earlier runs. This strong dependence on the number of growth runs suggests that impurity incorporation is somehow involved in the Jth reduction. The recombination lifetimes τ of double-heterostructure and quantum-well structures with different GaAs layer thicknesses d were obtained by a time-resolved photoluminescence measurement using picosecond light pulses. The photoluminescence decay times τPL depend strongly on d. The value of the GaAs bulk nonradiative recombination lifetime τnr b and the interfacial recombination velocity of the interfaces S1 + S2 are deduced from a plot of 1/τ vs. 1/d to be 68 ns and 330 cm/s, respectively. The τ of the quantum-well structure with a 10-nm GaAs well and superlattice barrier was also measured. The interfacial recombination velocity S1 + S2 of this sample is estimated to be less than 16 cm/s.

Original languageEnglish
Pages42-43
Number of pages2
Publication statusPublished - 1988 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Reduction of the interfacial recombination velocity in GaAs/AlGaAs quantum well structures by superlattice buffer layers'. Together they form a unique fingerprint.

  • Cite this