Reduction of switching fields of submicrometer sized magnetic tunnel junction with NiFe-based synthetic ferrimagnetic free layer

Young Min Lee, Yasuo Ando, Terunobu Miyazaki, Hitoshi Kubota

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

We fabricated submicrometer sized magnetic tunnel junctions (MTJs) with soft NiFe-based synthetic ferrimagnet (SynF) free layers. An extremely low switching field of 13 Oe was achieved when the stacking structure of the free layer was NiFe(2 nm)/CoFe(0.2 nm)/Ru(0.4 nm)/CoFe(0.2nm)/NiFe(2.1 nm) with 0.4 μm cell. The switching field of the SynF structure was almost independent of the cell width. Small magnetic anisotropy of NiFe and enhanced antiferromagnetic coupling strength from insertion of 0.2-nm -thick CoFe were important attributes for the low switching field in the submicrometer sized MTJs.

Original languageEnglish
Article number023905
JournalJournal of Applied Physics
Volume101
Issue number2
DOIs
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Reduction of switching fields of submicrometer sized magnetic tunnel junction with NiFe-based synthetic ferrimagnetic free layer'. Together they form a unique fingerprint.

Cite this