We fabricated submicrometer sized magnetic tunnel junctions (MTJs) with soft NiFe-based synthetic ferrimagnet (SynF) free layers. An extremely low switching field of 13 Oe was achieved when the stacking structure of the free layer was NiFe(2 nm)/CoFe(0.2 nm)/Ru(0.4 nm)/CoFe(0.2nm)/NiFe(2.1 nm) with 0.4 μm cell. The switching field of the SynF structure was almost independent of the cell width. Small magnetic anisotropy of NiFe and enhanced antiferromagnetic coupling strength from insertion of 0.2-nm -thick CoFe were important attributes for the low switching field in the submicrometer sized MTJs.
ASJC Scopus subject areas
- Physics and Astronomy(all)