Reduction of stacking faults in the ZnSe/GaAs heterostructure with a low-temperature-grown ZnSe buffer layer

J. S. Song; D. C. Oh; H. Makino; T. Hanada; M. W. Cho; T. Yao; Y. G. Park; D. Shindo; J. H. Chang

doi:10.1116/1.1651555

Reduction of stacking faults in the ZnSe/GaAs heterostructure with a low-temperature-grown ZnSe buffer layer

J. S. Song, D. C. Oh, H. Makino, T. Hanada, M. W. Cho, T. Yao, Y. G. Park, D. Shindo, J. H. Chang

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	607-610
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	2
DOIs	https://doi.org/10.1116/1.1651555
Publication status	Published - 2004 Jan 1

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Reduction of stacking faults in the ZnSe/GaAs heterostructure with a low-temperature-grown ZnSe buffer layer. / Song, J. S.; Oh, D. C.; Makino, H.; Hanada, T.; Cho, M. W.; Yao, T.; Park, Y. G.; Shindo, D.; Chang, J. H.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 2, 01.01.2004, p. 607-610.

Research output: Contribution to journal › Article › peer-review

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