Reduction of scratch on brush scrubbing in post CMP cleaning by analyzing contact kinetics on ultra low-k dielectric

Xun Gu, Takenao Nemoto, Akinobu Teramoto, Takashi Ito, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

Damage reduction during planarization is strongly required to avoid scratch generation leading to yield loss in an integrated circuit fabrication especially after implementation of ultra low-k dielectrics in Cu damascene structure. By analyzing contact characteristic on the advanced non-porous ultra low-& dielectric, fluorocarbon film, brush scrubbing at high rotation rate and low down pressure is proposed to satisfy both particle removal efficiency and scratch reduction in post CMP cleaning. Shear force increases with increasing in brush rotation rate because of enlargement of pressured area which is generated by fluid flow. Enhancement of contribution of fluid flow by increasing brush rotation rate with lowering down force to particle removable efficiency can be direction for future low-k compatible process.

Original languageEnglish
Title of host publicationChemical Mechanical Polishing 10
Pages103-109
Number of pages7
Edition7
DOIs
Publication statusPublished - 2009 Dec 1
EventChemical Mechanical Polishing 10 - 215th ECS Meeting - San Francisco, CA, United States
Duration: 2009 May 242009 May 29

Publication series

NameECS Transactions
Number7
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherChemical Mechanical Polishing 10 - 215th ECS Meeting
CountryUnited States
CitySan Francisco, CA
Period09/5/2409/5/29

ASJC Scopus subject areas

  • Engineering(all)

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