For the material design of antiferromagnetic layer enabling to reduce the read gap length of magnetic recording heads, the exchange bias between the ferromagnetic (FM) and antiferromagnetic (AFM) bilayer was investigated within the framework of the classical Heisenberg model. The dependence of the exchange bias on the AFM layer thickness was also calculated using the Landau-Lifshitz-Gilbert equation. The triple-Q (3Q), T1, and AF-I spin structures are obtained in the disordered 7-phase, ordered L12-, and L10- type lattices, respectively. The exchange bias is caused by the formation of the interfacial domain wall in the AFM layer, and the critical thickness dc of the AFM layer is dominated by the varied spin structures. Consequently, the relation of the critical thickness can be represented as √3dc3q = √2dc T1 = √cAF-I.
|Number of pages||6|
|Journal||Kyokai Joho Imeji Zasshi/Journal of the Institute of Image Information and Television Engineers|
|Publication status||Published - 2010 Sep|
ASJC Scopus subject areas
- Media Technology
- Computer Science Applications
- Electrical and Electronic Engineering