Reduction of plasma-radiation-induced interface states for plasma processes of charge-coupled-device image sensors using pulse-time-modulated plasma

N. Okigawa, Y. Ishikawa, S. Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We found that ultraviolet (UV) light from helium discharge plasmas and a metal halide lamp clearly induce SiO2-Si interface states in a metal-silicon-nitride-oxide-silicon (MNOS) structure produced by charge-coupled-device (CCD) wafer processes. A dark current originating in the interface states of CCD image sensors also increases by this UV irradiation. Decreasing the UV light causes pulse-time-modulated (TM) plasma to suppress the interface states, resulting in a CCD dark current. Using optical filters, we revealed that a photon energy of 3.90 eV (318 nm) to 4.96 eV (250 nm) causes an increase in interface states. Even in a practical CCD process, we also found that TM plasma is more effective in suppressing interface states for micro-lens formation processes using CF4 and O2 plasma etching than CW plasma.

Original languageEnglish
Title of host publication2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003
EditorsKoji Eriguchi, S. Krishnan, Terence Hook
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages154-157
Number of pages4
ISBN (Electronic)0780377478
DOIs
Publication statusPublished - 2003 Jan 1
Event2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003 - Corbeil-Essonnes, France
Duration: 2003 Apr 242003 Apr 25

Publication series

NameInternational Symposium on Plasma Process-Induced Damage, P2ID, Proceedings
Volume2003-January

Other

Other2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003
CountryFrance
CityCorbeil-Essonnes
Period03/4/2403/4/25

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

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    Okigawa, N., Ishikawa, Y., & Samukawa, S. (2003). Reduction of plasma-radiation-induced interface states for plasma processes of charge-coupled-device image sensors using pulse-time-modulated plasma. In K. Eriguchi, S. Krishnan, & T. Hook (Eds.), 2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003 (pp. 154-157). [1200946] (International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PPID.2003.1200946