Reduction of plasma induced damage in an inductively coupled plasma using pulsed source power

Seiji Samukawa; Ko Noguchi; Jennifer I. Colonell; Katherine H.A. Bogart; Mikhail V. Malyshev; Vincent M. Donnelly

doi:10.1116/1.591283

Reduction of plasma induced damage in an inductively coupled plasma using pulsed source power

Seiji Samukawa, Ko Noguchi, Jennifer I. Colonell, Katherine H.A. Bogart, Mikhail V. Malyshev, Vincent M. Donnelly

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

The effectiveness of pulsed source power in an inductively coupled (ICP), or transformer coupled plasma (TCP) system in reducing topography-dependent charging in MOS devices are evaluated. The charging is sensed by the reduction in the threshold voltage shift of metal-oxide-semiconductor transistors. During metal etching, the plasma damage was reduced by turning the 13.56 MHz radiofrequency power to the coil antenna and maintaining a continuous bias power. The use of TCP was effective and promising for charging suppression during etching.

Original language	English
Pages (from-to)	834-840
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	2
DOIs	https://doi.org/10.1116/1.591283
Publication status	Published - 2000 Mar 1
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Reduction of plasma induced damage in an inductively coupled plasma using pulsed source power. / Samukawa, Seiji; Noguchi, Ko; Colonell, Jennifer I.; Bogart, Katherine H.A.; Malyshev, Mikhail V.; Donnelly, Vincent M.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 2, 01.03.2000, p. 834-840.

Research output: Contribution to journal › Article › peer-review

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