The effectiveness of pulsed source power in an inductively coupled (ICP), or transformer coupled plasma (TCP) system in reducing topography-dependent charging in MOS devices are evaluated. The charging is sensed by the reduction in the threshold voltage shift of metal-oxide-semiconductor transistors. During metal etching, the plasma damage was reduced by turning the 13.56 MHz radiofrequency power to the coil antenna and maintaining a continuous bias power. The use of TCP was effective and promising for charging suppression during etching.
|Number of pages||7|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2000 Mar 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering