TY - JOUR
T1 - Reduction of plasma induced damage in an inductively coupled plasma using pulsed source power
AU - Samukawa, Seiji
AU - Noguchi, Ko
AU - Colonell, Jennifer I.
AU - Bogart, Katherine H.A.
AU - Malyshev, Mikhail V.
AU - Donnelly, Vincent M.
N1 - Copyright:
Copyright 2007 Elsevier B.V., All rights reserved.
PY - 2000/3
Y1 - 2000/3
N2 - The effectiveness of pulsed source power in an inductively coupled (ICP), or transformer coupled plasma (TCP) system in reducing topography-dependent charging in MOS devices are evaluated. The charging is sensed by the reduction in the threshold voltage shift of metal-oxide-semiconductor transistors. During metal etching, the plasma damage was reduced by turning the 13.56 MHz radiofrequency power to the coil antenna and maintaining a continuous bias power. The use of TCP was effective and promising for charging suppression during etching.
AB - The effectiveness of pulsed source power in an inductively coupled (ICP), or transformer coupled plasma (TCP) system in reducing topography-dependent charging in MOS devices are evaluated. The charging is sensed by the reduction in the threshold voltage shift of metal-oxide-semiconductor transistors. During metal etching, the plasma damage was reduced by turning the 13.56 MHz radiofrequency power to the coil antenna and maintaining a continuous bias power. The use of TCP was effective and promising for charging suppression during etching.
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U2 - 10.1116/1.591283
DO - 10.1116/1.591283
M3 - Article
AN - SCOPUS:0034156292
VL - 18
SP - 834
EP - 840
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 2
ER -