Reduction of plasma induced damage in an inductively coupled plasma using pulsed source power

Seiji Samukawa, Ko Noguchi, Jennifer I. Colonell, Katherine H.A. Bogart, Mikhail V. Malyshev, Vincent M. Donnelly

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

The effectiveness of pulsed source power in an inductively coupled (ICP), or transformer coupled plasma (TCP) system in reducing topography-dependent charging in MOS devices are evaluated. The charging is sensed by the reduction in the threshold voltage shift of metal-oxide-semiconductor transistors. During metal etching, the plasma damage was reduced by turning the 13.56 MHz radiofrequency power to the coil antenna and maintaining a continuous bias power. The use of TCP was effective and promising for charging suppression during etching.

Original languageEnglish
Pages (from-to)834-840
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number2
DOIs
Publication statusPublished - 2000 Mar 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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