Reduction of nonradiative recombination center for ZnO films grown under Zn-rich conditions by metal organic chemical vapor deposition

Eiji Fujimoto, Kenji Watanabe, Yuji Matsumoto, Hideomi Koinuma, Masatomo Sumiya

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

ZnO films were grown by metalorganic chemical vapor deposition using the repeated temperature modulation in an H2 ambient. The crystalline quality, as defined by the full-width at half-maximum of the ω (1011) reflection, was found to be correlated with the photoluminescence (PL) lifetime at 300 K. The fine structure of the PL spectra for the samples grown under Zn-rich condition at 8 K indicated the higher order (n=2) structure of free exciton A, two electron satellites and phonon-replicas. The internal quantum efficiency and the PL lifetime at 300 K were 5.5% and 2.6 ns, respectively, indicating a reduction in Zn vacancies in the ZnO films.

Original languageEnglish
Article number131913
JournalApplied Physics Letters
Volume97
Issue number13
DOIs
Publication statusPublished - 2010 Sep 27
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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