Reduction of electrical resistivity of Cu interconnects

Masanori Murakami, Miki Moriyama, Susumu Tsukimoto, Kazuhiro Ito, Takashi Onishi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Although Cu was found to be attractive as interconnect materials for ultra-large scale integrated (ULSI) Si devices, the electrical resistance of Cu films was found to increase significantly when the film thickness was thinner than 70nm. In this talk we will first review our recent results on (1) determination of the primary factor to increase the electrical resistivity of nano-scale Cu films, (2) development of a fabrication technique for low resistance Cu films, and (3) formation of extremely thin diffusion barriers between Cu films and insulators by adding a small amount of a second element to Cu interconnects. Then, we will propose a new fabrication process of Cu innerconnects using a sputter-deposition and high temperature reflow technique.

    Original languageEnglish
    Title of host publicationElectronic, Magnetic and Photonic Materials Division Symposium
    Subtitle of host publicationAdvanced Metallizations and Interconnect Technologies 2007 - Proceedings of Symposium held during the 2007 TMS Annual Meeting
    Pages1-9
    Number of pages9
    Publication statusPublished - 2007 Dec 1
    Event136th TMS Annual Meeting, 2007 - Orlando, FL, United States
    Duration: 2007 Feb 252007 Mar 1

    Publication series

    NameTMS Annual Meeting

    Other

    Other136th TMS Annual Meeting, 2007
    CountryUnited States
    CityOrlando, FL
    Period07/2/2507/3/1

    Keywords

    • Cu interconnects
    • Electrical resistivity

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Mechanics of Materials
    • Metals and Alloys

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