Reduction of efficiency droop in Semipolar (11̄01) InGaN/GaN light emitting diodes grown on patterned silicon substrates

C. H. Chiu, D. W. Lin, C. C. Lin, Z. Y. Li, H. C. Kuo, T. C. Lu, S. C. Wang, W. T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The semi-polar InGaN-based LEDs exhibits low efficiency droop because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations.

Original languageEnglish
Title of host publication2011 Conference on Lasers and Electro-Optics
Subtitle of host publicationLaser Science to Photonic Applications, CLEO 2011
PublisherIEEE Computer Society
ISBN (Print)9781557529107
DOIs
Publication statusPublished - 2011 Jan 1

Publication series

Name2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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    Chiu, C. H., Lin, D. W., Lin, C. C., Li, Z. Y., Kuo, H. C., Lu, T. C., Wang, S. C., Liao, W. T., Tanikawa, T., Honda, Y., Yamaguchi, M., & Sawaki, N. (2011). Reduction of efficiency droop in Semipolar (11̄01) InGaN/GaN light emitting diodes grown on patterned silicon substrates. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011 [5951231] (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011). IEEE Computer Society. https://doi.org/10.1364/cleo_at.2011.jwa94