Reduction of efficiency droop in semipolar (1101) InGaN/GaN light emitting diodes grown on patterned silicon substrates

Ching Hsueh Chiu, Da Wei Lin, Chien Chung Lin, Zhen Yu Li, Wei Ting Chang, Hung Wen Hsu, Hao Chung Kuo, Tien Chang Lu, Shing Chung Wang, Wei Tsai Liao, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki

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36 Citations (Scopus)

Abstract

We present a study of semi-polar (1101) InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric- pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current.

Original languageEnglish
Article number012105
JournalApplied Physics Express
Volume4
Issue number1
DOIs
Publication statusPublished - 2011 Jan 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Chiu, C. H., Lin, D. W., Lin, C. C., Li, Z. Y., Chang, W. T., Hsu, H. W., Kuo, H. C., Lu, T. C., Wang, S. C., Liao, W. T., Tanikawa, T., Honda, Y., Yamaguchi, M., & Sawaki, N. (2011). Reduction of efficiency droop in semipolar (1101) InGaN/GaN light emitting diodes grown on patterned silicon substrates. Applied Physics Express, 4(1), [012105]. https://doi.org/10.1143/APEX.4.012105