Reduction of efficiency droop in semipolar (11-01) InGaN/GaN light emitting diodes grown on patterned silicon substrates

C. H. Chiu, D. W. Lin, C. C. Lin, Z. Y. Li, H. C. Kuo, T. C. Lu, S. C. Wang, W. T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

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