Reduction of efficiency droop in semipolar (11-01) InGaN/GaN light emitting diodes grown on patterned silicon substrates

C. H. Chiu, D. W. Lin, C. C. Lin, Z. Y. Li, H. C. Kuo, T. C. Lu, S. C. Wang, W. T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The semi-polar InGaN-based LEDs exhibits low efficiency droop because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2011
Publication statusPublished - 2011 Dec 1
EventCLEO: Science and Innovations, CLEO_SI 2011 - Baltimore, MD, United States
Duration: 2011 May 12011 May 6

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherCLEO: Science and Innovations, CLEO_SI 2011
CountryUnited States
CityBaltimore, MD
Period11/5/111/5/6

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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    Chiu, C. H., Lin, D. W., Lin, C. C., Li, Z. Y., Kuo, H. C., Lu, T. C., Wang, S. C., Liao, W. T., Tanikawa, T., Honda, Y., Yamaguchi, M., & Sawaki, N. (2011). Reduction of efficiency droop in semipolar (11-01) InGaN/GaN light emitting diodes grown on patterned silicon substrates. In CLEO: Science and Innovations, CLEO_SI 2011 (Optics InfoBase Conference Papers).