Reduction of dislocations in a (1 1 2̄ 2)GaN grown by selective MOVPE on (1 1 3)Si

Tomoyuki Tanikawa, Y. Kagohashi, Y. Honda, M. Yamaguchi, N. Sawaki

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Two-step selective epitaxy (SAG/ELO) of (1 1 2̄ 2)GaN on (1 1 3)Si substrate is studied to reduce the defect density in the epitaxial lateral overgrowth. The first SAG/ELO is to prepare a (1 1 2̄ 2)GaN template on a (1 1 3)Si and the second SAG/ELO is to get a uniform (1 1 2̄ 2)GaN. It is found that the reduction of the defect density is improved by optimizing the mask configuration in the second SAG/ELO. The minimum dark spot density obtained is 3×107/cm2, which is two orders of magnitude lower than that found in a (0 0 0 1)GaN grown on (1 1 1)Si.

Original languageEnglish
Pages (from-to)2879-2882
Number of pages4
JournalJournal of Crystal Growth
Volume311
Issue number10
DOIs
Publication statusPublished - 2009 May 1
Externally publishedYes

Keywords

  • A3. Metalorganic chemical vapor deposition
  • B1. Nitrides
  • B1. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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