Two-step selective epitaxy (SAG/ELO) of (1 1 2̄ 2)GaN on (1 1 3)Si substrate is studied to reduce the defect density in the epitaxial lateral overgrowth. The first SAG/ELO is to prepare a (1 1 2̄ 2)GaN template on a (1 1 3)Si and the second SAG/ELO is to get a uniform (1 1 2̄ 2)GaN. It is found that the reduction of the defect density is improved by optimizing the mask configuration in the second SAG/ELO. The minimum dark spot density obtained is 3×107/cm2, which is two orders of magnitude lower than that found in a (0 0 0 1)GaN grown on (1 1 1)Si.
- A3. Metalorganic chemical vapor deposition
- B1. Nitrides
- B1. Semiconducting III-V materials
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry