Reduction of dislocations in a (1 1 2̄ 2)GaN grown by selective MOVPE on (1 1 3)Si

Tomoyuki Tanikawa; Y. Kagohashi; Y. Honda; M. Yamaguchi; N. Sawaki

doi:10.1016/j.jcrysgro.2009.01.109

Reduction of dislocations in a (1 1 2̄ 2)GaN grown by selective MOVPE on (1 1 3)Si

Tomoyuki Tanikawa, Y. Kagohashi, Y. Honda, M. Yamaguchi, N. Sawaki

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Two-step selective epitaxy (SAG/ELO) of (1 1 2̄ 2)GaN on (1 1 3)Si substrate is studied to reduce the defect density in the epitaxial lateral overgrowth. The first SAG/ELO is to prepare a (1 1 2̄ 2)GaN template on a (1 1 3)Si and the second SAG/ELO is to get a uniform (1 1 2̄ 2)GaN. It is found that the reduction of the defect density is improved by optimizing the mask configuration in the second SAG/ELO. The minimum dark spot density obtained is 3×10⁷/cm², which is two orders of magnitude lower than that found in a (0 0 0 1)GaN grown on (1 1 1)Si.

Original language	English
Pages (from-to)	2879-2882
Number of pages	4
Journal	Journal of Crystal Growth
Volume	311
Issue number	10
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.01.109
Publication status	Published - 2009 May 1
Externally published	Yes

Keywords

A3. Metalorganic chemical vapor deposition
B1. Nitrides
B1. Semiconducting III-V materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2009.01.109

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title = "Reduction of dislocations in a (1 1 {\=2} 2)GaN grown by selective MOVPE on (1 1 3)Si",

abstract = "Two-step selective epitaxy (SAG/ELO) of (1 1 {\=2} 2)GaN on (1 1 3)Si substrate is studied to reduce the defect density in the epitaxial lateral overgrowth. The first SAG/ELO is to prepare a (1 1 {\=2} 2)GaN template on a (1 1 3)Si and the second SAG/ELO is to get a uniform (1 1 {\=2} 2)GaN. It is found that the reduction of the defect density is improved by optimizing the mask configuration in the second SAG/ELO. The minimum dark spot density obtained is 3×107/cm2, which is two orders of magnitude lower than that found in a (0 0 0 1)GaN grown on (1 1 1)Si.",

keywords = "A3. Metalorganic chemical vapor deposition, B1. Nitrides, B1. Semiconducting III-V materials",

author = "Tomoyuki Tanikawa and Y. Kagohashi and Y. Honda and M. Yamaguchi and N. Sawaki",

year = "2009",

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doi = "10.1016/j.jcrysgro.2009.01.109",

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T1 - Reduction of dislocations in a (1 1 2̄ 2)GaN grown by selective MOVPE on (1 1 3)Si

AU - Tanikawa, Tomoyuki

AU - Kagohashi, Y.

AU - Honda, Y.

AU - Yamaguchi, M.

AU - Sawaki, N.

PY - 2009/5/1

Y1 - 2009/5/1

N2 - Two-step selective epitaxy (SAG/ELO) of (1 1 2̄ 2)GaN on (1 1 3)Si substrate is studied to reduce the defect density in the epitaxial lateral overgrowth. The first SAG/ELO is to prepare a (1 1 2̄ 2)GaN template on a (1 1 3)Si and the second SAG/ELO is to get a uniform (1 1 2̄ 2)GaN. It is found that the reduction of the defect density is improved by optimizing the mask configuration in the second SAG/ELO. The minimum dark spot density obtained is 3×107/cm2, which is two orders of magnitude lower than that found in a (0 0 0 1)GaN grown on (1 1 1)Si.

AB - Two-step selective epitaxy (SAG/ELO) of (1 1 2̄ 2)GaN on (1 1 3)Si substrate is studied to reduce the defect density in the epitaxial lateral overgrowth. The first SAG/ELO is to prepare a (1 1 2̄ 2)GaN template on a (1 1 3)Si and the second SAG/ELO is to get a uniform (1 1 2̄ 2)GaN. It is found that the reduction of the defect density is improved by optimizing the mask configuration in the second SAG/ELO. The minimum dark spot density obtained is 3×107/cm2, which is two orders of magnitude lower than that found in a (0 0 0 1)GaN grown on (1 1 1)Si.

KW - A3. Metalorganic chemical vapor deposition

KW - B1. Nitrides

KW - B1. Semiconducting III-V materials

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ER -

Reduction of dislocations in a (1 1 2̄ 2)GaN grown by selective MOVPE on (1 1 3)Si

Abstract

Keywords

ASJC Scopus subject areas

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